| 型號 | 廠商 | 描述 |
| m27c512-45xb1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-45xb1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c1024-45xb1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c512-45xb1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c1024-45xb1x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c512-45xb1x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | CABLE SMA/BNC 12 RG-58 |
| m27c512-45xb3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit (64K x8) UV EPROM and OTP EPROM |
| m58mr064dzc 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 64 Mbit 4Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory |
| m58wr064et10zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| m58wr064et70zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | BERGSTRIP .100CC SR STRAIGHT |
| m58wr064et80zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | HDR P R 4P PW N 1X4 .100TQ |
| m41st84ymq 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS |
| m27c1024-55f1x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c512-45b6e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c1024-35b7x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c1024-45b7x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c1024-55b7x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c1024-15b7x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m25p10 2 3 4 5 6 7 |
意法半導體 | 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface |
| m28r400ctt90zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| m28r400ctt90zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
| m27c512-45xc1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit (64K x8) UV EPROM and OTP EPROM |
| m27c512-45xc1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-15xc1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25xc1e 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-45xc1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-15xc1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c512-25xc1f 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m27c1024-35xc1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c1024-45xc1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c1024-55xc1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c1024-15xc1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m28w320fsu70za1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32Mbit (2Mb x16) and 64Mbit (4Mb x16) 3V Supply, Uniform Block, Secure Flash Memories |
| m74hc27rm13tr 2 3 4 5 6 7 8 9 |
意法半導體 | RESISTOR 100 OHM 50 W 10% WW |
| m74hc27ttr 2 3 4 5 6 7 8 9 |
意法半導體 | TRIPLE 3-INPUT NOR GATE |
| m74hc4017ttr 2 3 4 5 6 7 8 9 10 11 12 |
意法半導體 | Selector Switch; Contact Current Max:10A; No. of Poles:2; No. of Switch Positions:3; Circuitry:DPST-2NO |
| m27c1024-80xb1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c512-80xb1tr 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | SMM310; Package: HG-MMA-4; Acoustic Sensitivity: -42.0 dBV/Pa; Signal to Noise: 59.0 dB(A); V<sub>DD</sub> (min): 1.5 V; V<sub>DD</sub> (max): 3.3 V; Distortion Treshold: 110.0 dBSPL; |
| m27c1024-80xb1x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 |
意法半導體 | 1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
| m27c512-80xb1x 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
| m74hc86b1 2 3 4 5 6 7 8 9 |
意法半導體 | QUAD EXCLUSIVE OR GATE |
| m74hc86b1r 2 3 4 5 6 7 8 9 |
意法半導體 | QUAD EXCLUSIVE OR GATE |
| m74hc86m1r 2 3 4 5 6 7 8 9 |
意法半導體 | QUAD EXCLUSIVE OR GATE |
| m95040-rbn3 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 4Kbit, 2Kbit and 1Kbit Serial SPI Bus EEPROM With High Speed Clock |
| m58wr128eb10zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| m59dr032a120n6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| m59dr032a120zb1t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| m59dr032a120zb6t 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| m59dr032an 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| m59dr032azb 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 |
意法半導體 | 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |