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參數資料
| 型號： | M58WR128ET80ZB6T |
| 廠商： | 意法半導體 |
| 英文描述： | 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 128兆位和8Mb × 16，多銀行，突發1.8V電源快閃記憶體 |
| 文件頁數： | 1/87頁 |
| 文件大小： | 1113K |
| 代理商： | M58WR128ET80ZB6T |
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PRODUCT PREVIEW
This is preliminary information on a new product now in development. Details are subject to change without notice.
FEATURES SUMMARY
s
SUPPLY VOLTAGE
–VDD = 1.65V to 2.2V for Program, Erase and
Read
–VDDQ = 1.65V to 3.3V for I/O Buffers
–VPP = 12V for fast Program (optional)
s
SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 54MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70, 80, 100ns
s
SYNCHRONOUS BURST READ SUSPEND
s
PROGRAMMING TIME
– 8s by Word typical for Fast Factory Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
s
MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit Banks
– Parameter Blocks (Top or Bottom location)
s
DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write operations
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
–WP for Block Lock-Down
s
SECURITY
– 128 bit user programmable OTP cells
– 64 bit unique device number
– One parameter block permanently lockable
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COMMON FLASH INTERFACE (CFI)
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
Figure 1. Package
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ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M58WR128ET: 881Eh
– Bottom Device Code, M58WR128EB: 881Fh
VFBGA60 (ZB)
12.5 x 12mm
FBGA
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相關代理商/技術參數 |
參數描述 |
|---|---|
| M58WR128ETZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR128E-ZBT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WT032KB | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32- and 64-Mbit (】16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories |
| M58WT032KT | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32- and 64-Mbit (】16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories |
| M58WT032QB70ZB6E | 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:32- and 64-Mbit (】16, multiple bank, burst) 1.8 V core, 3.0 V I/O supply Flash memories |
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