- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383304 > M5M4V64S30ATP-10L (Mitsubishi Electric Corporation) 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | M5M4V64S30ATP-10L |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| 中文描述： | 64M號（4銀行甲2097152字× 8位）同步DRAM |
| 文件頁數(shù)： | 1/51頁 |
| 文件大小： | 1082K |
| 代理商： | M5M4V64S30ATP-10L |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁
MITSUBISHI LSIs
MITSUBISHI ELECTRIC
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
M5M4V64S30ATP-8A,-8L,-8, -10L, -10
Mar'98
SDRAM (Rev.1.3)
DESCRIPTION
The M5M4V64S30ATP is a 4-bank x 2097152-word x 8-bit
Synchronous DRAM, with LVTTL interface. All inputs and
outputs are referenced to the rising edge of CLK. The
M5M4V64S30ATP achieves very high speed data rate up to
125MHz, and is suitable for main memory or graphic memory
in computer systems.
FEATURES
- Single 3.3v±0.3v power supply
- Clock frequency 125MHz /100MHz
- Fully synchronous operation referenced to clock rising edge
- 4 bank operation controlled by BA0, BA1 (Bank Address)
- /CAS latency- 2/3 (programmable)
- Burst length- 1/2/4/8/Full Page (programmable)
- Burst type- sequential / interleave (programmable)
- Column access - random
- Burst Write / Single Write (programmable)
- Auto precharge / All bank precharge controlled by A10
- Auto refresh and Self refresh
- 4096 refresh cycles /64ms
- Column address A0-A8
- LVTTL Interface
- 400-mil, 54-pin Thin Small Outline Package (TSOP II) with
0.8mm lead pitch
Some of contents are subject to change without notice.
CLK
CKE
/CS
/RAS
/CAS
/WE
DQ0-7
DQM
A0-11
BA0,1
Vdd
VddQ
Vss
VssQ
: Master Clock
: Clock Enable
: Chip Select
: Row Address Strobe
: Column Address Strobe
: Write Enable
: Data I/O
: Output Disable/ Write Mask
: Address Input
: Bank Address
: Power Supply
: Power Supply for Output
: Ground
: Ground for Output
PIN CONFIGURATION
(TOP VIEW)
Max.
Frequency
CLK Access
Time
M5M4V64S30ATP-8A
125MHz
6ns
1
M5M4V64S30ATP-10
100MHz
8ns
M5M4V64S30ATP-8
100MHz
6ns
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
4
Vdd
DQ0
VddQ
NC
DQ1
VssQ
NC
DQ2
VddQ
NC
DQ3
VssQ
NC
Vdd
NC
/WE
/CAS
/RAS
/CS
BA0(A13)
BA1(A12)
A10
A0
A1
Vss
DQ7
VssQ
NC
DQ6
VddQ
NC
DQ5
VssQ
NC
DQ4
VddQ
NC
Vss
NC
DQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
Vss
A2
A3
Vdd
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M5M4V64S30ATP-10 | Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 |
| M5M4V64S30ATP-12 | 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S30ATP-8 | 30V N-Channel PowerTrench MOSFET |
| M5M4V64S30ATP-8A | Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85 |
| M5M4V64S30ATP-8L | Octal D-Type Edge-Triggered Flip-Flops with 3-State Outputs 20-SOIC -40 to 85 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M5M4V64S30ATP-12 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S30ATP-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S30ATP-8A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM |
| M5M4V64S30ATP-8L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM |
| M5M4V64S40ATP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。