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參數(shù)資料
| 型號(hào)： | MA2H736 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diodes (SBD) |
| 中文描述： | 1 A, 40 V, SILICON, SIGNAL DIODE |
| 封裝： | ROHS COMPLIANT, HNMINIP2-J1, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 43K |
| 代理商： | MA2H736 |
1
Schottky Barrier Diodes (SBD)
MA2H736
Silicon epitaxial planar type
For switching circuits
I
Features
Small and thin Half New Mini-power package
Allowing to rectify under (I
F(AV)
= 1 A) condition
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RRM
40
V
Repetitive peak reverse voltage
40
V
Average forward current
I
F(AV)
1
A
Non-repetitive peak forward
surge current
*
I
FSM
30
A
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
40 to
+
125
Marking Symbol: B
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
F
C
t
V
R
= 50 V
I
F
= 1 A
V
R
= 10 V, f
= 1 MHz
2
mA
Forward voltage (DC)
0.55
V
Terminal capacitance
50
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
I
rr
= 0.1 · I
R
, R
L
= 100
30
ns
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Rated input/output frequency: 20 MHz
2. * : t
rr
measuring instrument
1 : Anode
2 : Cathode
Half New Mini-Power Package (2-pin)
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
0.1
·
I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
3.2
±
0.1
1
±
0
1
±
0
1
±
0
1
2
0 to 0.05
0
+
0
0
0.9
±
0.2
0.9
±
0.2
3.8
±
0.2
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
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