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參數資料
| 型號： | MA4E2160 |
| 元件分類： | 射頻混頻器 |
| 英文描述： | GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE |
| 封裝： | CASE 1262, FLIP CHIP-4 |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MA4E2160 |
1
GaAs Flip Chip Schottky Barrier Diodes
M/A-COM Products
Rev. V5
MA4E1317, MA4E1318, MA4E1319-1,
MA4E1319-2, MA4E2160
ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be avail-
able. Commitment to produce in volume is not guaranteed.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice.
Features
Low Series Resistance
Low Capacitance
High Cutoff Frequency
Silicon Nitride Passivation
Polyimide Scratch Protection
Designed for Easy Circuit Insertion
Description and Applications
M/A-COM's MA4E1317 single, MA4E1318 anti-
parallel
pair,
MA4E1319-1
reverse
tee,
MA4E1319-2 series tee and MA4E2160 uncon-
nected anti-parallel pair are gallium arsenide flip
chip Schottky barrier diodes. These devices are
fabricated on OMCVD epitaxial wafers using a
process designed for high device uniformity and
extremely low parasitics.
The diodes are fully
passivated with silicon nitride and have an addi-
tional layer of polyimide for scratch protection.
The protective coatings prevent damage to the
junction during automated or manual handling.
The flip chip configuration is suitable for pick
and place insertion. The high cutoff frequency
of these diodes allows use through millimeter
wave frequencies. Typical applications include
single and double balanced mixers in PCN
transceivers and radios, police radar detectors,
and automotive radar detectors.
The devices
can be used through 80 GHz.
The MA4E1318 anti-parallel pair is designed for
use in sub harmonically pumped mixers. Close
matching of the diode characteristics results in
high LO suppression at the RF input.
MA4E1317
MA4E1318
MA4E1319-1
MA4E1319-2
MA4E2160
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相關代理商/技術參數 |
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| MA4E2200 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Surface Mount Zero Bias Schottky Detector Diodes |
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| MA4E2200A-1141 | 制造商:M/A-COM Technology Solutions 功能描述:SCHOTTKY 1.5V 0.001A 2PIN SOD-323 - Bulk |
| MA4E2200A-1141T | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Surface Mount Zero Bias Schottky Detector Diodes |
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