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參數(shù)資料
| 型號： | MA4E401H-906 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SILICON, HIGH BARRIER SCHOTTKY, C-X BAND, MIXER DIODE |
| 封裝： | CASE 906, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 83K |
| 代理商： | MA4E401H-906 |
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 (03) 3226-1671
s
Europe: Tel.
+44 (1344) 869 595
Fax (800) 618-8883
Fax +81 (03) 3226-1451
Fax +44 (1344) 300 020
1
Specifications Subject to Change Without Notice.
V3.00
Schottky Barrier Beam Lead
and Packaged Bridge Quads
MA4E400 Series
Features
q
Small Physical Size for Microstrip Mounting
q
High Reliability
q
Closely Matched Junctions for High Isolation
q
Low, Medium and High Barrier Diodes Available
to Match RF Power
q
Minimum Parasitics for Broadband Designs
Description
Each Schottky barrier diode quad consists of four closely
matched diodes connected in a bridge configuration. The
four diodes are formed monolithically to assure close
matching of electrical characteristics, namely capacitance,
forward voltage and series resistance. The silicon which
originally connected the diodes in slice form is etched
away so that each individual diode is in beam lead form.
The beam lead construction assures minimum junction
capacitance, minimum connection lead inductance and
permits the interconnection of the diodes into the bridge
configuration at the wafer level.
Three barrier height levels are available. The MA4E400L
series features a low barrier for lower power applications.
The MA4E400M and MA4E400H series feature medium
and high barriers respectively. The RF frequencies can
range up to 18.0 GHz with selection of an appropriate
junction capacitance.
These parts are available as beam leads or in four stripline
packages.
Case Styles
906
227
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