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參數資料
| 型號： | MA786 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type |
| 中文描述： | 0.1 A, 30 V, SILICON, SIGNAL DIODE, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 46K |
| 代理商： | MA786 |
1
Schottky Barrier Diodes (SBD)
MA3X786
Silicon epitaxial planar type
For super-high speed switching circuit
For small current rectification
I
Features
Allowing to rectify under (I
F(AV)
= 100 mA) condition
Optimum for high-frequency rectification because of its short
reverse recovery time (t
rr
)
Low V
F
(forward rise voltage), with high rectification efficiency
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Marking Symbol: M3T
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
Parameter
Symbol
Rating
Unit
Reverse voltage (DC)
V
R
V
RRM
I
FM
30
V
Repetitive peak reverse voltage
30
V
Peak forward current
300
mA
Average forward current
I
F(AV)
100
mA
Non-repetitive peak forward
surge current
*
I
FSM
1
A
Junction temperature
T
j
T
stg
125
°
C
°
C
Storage temperature
55 to
+
125
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
I
R
V
R
= 30 V
I
F
= 100 mA
V
R
= 0 V, f
= 1 MHz
15
μ
A
Forward voltage (DC)
V
F
C
t
0.55
V
Terminal capacitance
20
pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA
I
rr
= 10 mA, R
L
= 100
2
ns
I
Electrical Characteristics
T
a
=
25
°
C
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : t
rr
measuring circuit
JEDEC : TO-236
EIAJ : SC-59
Mini Type Package(3-pin)
Internal Connection
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
=
50
W.F.Analyzer
(SAS-8130)
R
i
=
50
t
p
=
2
μ
s
t
r
=
0.35 ns
δ
=
0.05
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
10%
Input Pulse
Output Pulse
I
=
10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
1
2
3
2.8
+
0.2
0.3
+
0.25
1.5
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
0
0
1
+
0
0
0
0.4
±
0.2
0
0
+
0
0
1
0.1 to 0.3
2
+
0
0
1 : Anode
2 : NC
3 : Cathode
相關PDF資料 |
PDF描述 |
|---|---|
| MA3X786 | Silicon epitaxial planar type |
| MA786WA | Silicon epitaxial planar type |
| MA786WK | Silicon epitaxial planar type |
| MA789 | Schottky Barrier Diodes (SBD) |
| mA78L00PK | POSITIVE-VOLTAGE REGULATORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MA786WA | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA786WK | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon epitaxial planar type |
| MA789 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Schottky Barrier Diodes (SBD) |
| MA78FAA | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:14 pin DIP, 5.0 Volt, ACMOS/TTL, Clock Oscillator |
| MA78FAA-R | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:14 pin DIP, 5.0 Volt, ACMOS/TTL, Clock Oscillator |
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