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參數(shù)資料
| 型號(hào)： | MA7D52A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon epitaxial planar type (cathode common) |
| 中文描述： | 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220D-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 66K |
| 代理商： | MA7D52A |
632
Schottky Barrier Diodes (SBD)
MA3D752, MA3D752A
(MA7D52, MA7D52A)
Silicon epitaxial planar type (cathode common)
For switching power supply
I
Features
Low forward rise voltage V
F
TO-220D (Full-pack package) with high dielectric breakdown
voltage
>
5.0 kV
Easy-to-mount, caused by its V cut lead end
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Repetitive peak
reverse voltage
MA3D752
V
RRM
40
V
MA3D752A
45
Non repetitive peak
reverse voltage
MA3D752
V
RSM
40
V
MA3D752A
45
Average forward current
I
F(AV)
20
A
Non-repetitive peak forward
surge current
*
I
FSM
120
A
Junction temperature
T
j
40 to
+
125
40 to
+
125
°
C
°
C
Storage temperature
T
stg
1 : Anode
2 : Cathode
3 : Anode
TO-220D Package
Note) * : Half sine-wave; 10 ms/cycle
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
MA3D752
I
R
V
R
= 40 V, T
C
= 25
°
C
V
R
= 45 V, T
C
= 25
°
C
I
F
= 10 A, T
C
= 25
°
C
Direct current (between junction and case)
5
mA
MA3D752A
5
Forward voltage (DC)
Thermal resistance
V
F
0.55
3
V
R
th(j-c)
°
C/W
I
Electrical Characteristics
T
a
=
25
°
C
Note) Rated input/output frequency: 100 MHz
Internal Connection
1
2
3
1
9.9
±
0.3
1
±
0
1
±
0
4
±
0
4.6
±
0.2
2.9
±
0.2
0.8
±
0.1
1.4
±
0.2
1.6
±
0.2
2
3
φ
3.2
±
0.1
2.6
±
0.1
0.55
±
0.15
2.54
±
0.3
5.08
±
0.5
3
±
0
Note) The part number in the parenthesis shows conventional part number.
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