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參數資料
| 型號： | IXGH12N60C |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Lightspeed Series HiPerFAST IGBT(Lightspeed系列,VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 34K |
| 代理商： | IXGH12N60C |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 33
Clamped inductive load, L = 300 H
24
12
48
A
A
A
I
= 24
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
T
C
= 25 C
100
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4
0.55/5
Nm/lb.in.
Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Features
Very high frequency IGBT
New generation HDMOS
TM
process
International standard package
JEDEC TO-247
High peak current handling capability
Applications
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
Advantages
Fast switching speed
High power density
98503A (5/99)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
GE
= V
GE
600
2.5
V
V
5.0
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
1.5
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15 V
2.1
2.7
V
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TO-247
C (TAB)
GCE
HiPerFAST
TM
IGBT
Lightspeed
TM
Series
V
CES
I
C25
V
CE(sat)
=
t
fi(typ)
= 600 V
=
24 A
2.1 V
= 55 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 12N60C
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH12N90C | Lightspeed Series HiPerFAST IGBT(VCES為900V，VCE(sat)為3.0V的HiPerFAST絕緣柵雙極晶體管) |
| IXGH15N120BD1 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| IXGH15N120CD1 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| IXGT15N120BD1 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| IXGT15N120CD1 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGH12N60CD1 | 功能描述:IGBT 晶體管 24 Amps 600V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N90C | 功能描述:IGBT 晶體管 24 Amps 900V 3 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N90C_03 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT Lightspeed Series |
| IXGH14N170A | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:High Voltage IGBT |
| IXGH15N120B | 功能描述:IGBT 晶體管 30 Amps 1200V 3.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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