- 您現在的位置：買賣IC網 > PDF目錄383197 > IXGT15N120CD1 (IXYS CORP) Low VCE(sat) IGBT with Diode High Speed IGBT with Diode PDF資料下載
參數資料
| 型號： | IXGT15N120CD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| 中文描述： | 30 A, 1200 V, N-CHANNEL IGBT, TO-268AA |
| 封裝： | D3PAK-3 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 56K |
| 代理商： | IXGT15N120CD1 |
1 - 2
2000 IXYS All rights reserved
TO-247AD
(IXGH)
G
C
E
G = Gate
E = Emitter
C = Collector
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
1200
1200
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
G
= 10
Clamped inductive load
30
15
60
A
A
A
I
= 40
@0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
T
C
= 25 C
150
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
300
C
Maximum tab temperature
soldering SMD devices for 10s
260
C
Weight
TO-247AD/TO-268
6/4
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 1 A, V
GE
= 0 V
= 250 A, V
CE
= V
GE
1000
2.5
V
V
5.0
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
500
A
2
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
Note 2
= I
C90,
V
GE
= 15 V
15N120BD1
15N120CD1
3.2
3.8
V
V
Features
International standard packages:
JEDEC TO-247AD & TO-268
IGBT and anti-parallel FRED in one
package
MOS Gate turn-on
- drive simplicity
Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Saves space (two devices in one
package)
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
98658A (7/00)
TO-268
(IXGT)
G
C (TAB)
E
Low V
CE(sat)
IGBT with Diode
High Speed IGBT with Diode
IXGH/IXGT 15N120BD1
IXGH/IXGT 15N120CD1
TAB
V
DSS
1200 V
1200 V
I
C25
30 A
30 A
V
CE(sat)
3.2 V
3.8 V
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關PDF資料 |
PDF描述 |
|---|---|
| IXGH15N120B | HiPerFAST IGBT |
| IXGH16N170A | High Voltage IGBT |
| IXGH16N170AH1 | High Voltage IGBT |
| IXGT16N170AH1 | High Voltage IGBT |
| IXGH16N170 | High Voltage IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IXGT16N170 | 功能描述:IGBT 晶體管 32 Amps 1700 V 3.5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT16N170A | 功能描述:IGBT 晶體管 32 Amps 1700 V 5 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT16N170AH1 | 功能描述:IGBT 晶體管 11 Amps 1700V 5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT20N 60B | 功能描述:IGBT 晶體管 40 Amps 600 V 2.0 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGT20N 60BD1 | 功能描述:IGBT 晶體管 40 Amps 600 V 2.0 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。