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參數資料
型號: IXGT16N170AH1
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: High Voltage IGBT
中文描述: 16 A, 1700 V, N-CHANNEL IGBT, TO-268AA
封裝: PLASTIC, TO-268, 3 PIN
文件頁數: 1/2頁
文件大?。?/td> 533K
代理商: IXGT16N170AH1
2004 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700
= 16
= 5.0
= 40 ns
V
A
V
IXGH/IXGT 16N170A
IXGH/IXGT 16N170AH1
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXGH)
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL
94
V-0
flammability classification
z
SONIC
TM
fast recovery copack diode
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS99235(10/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
1700
3.0
V
V
5.0
I
CES
V
CE
= 0.8 V
V
GE
= 0 V, Note 1
T
J
= 125
°
C 16N170A
16N170A
16N170AH1
50
μ
A
μ
A
μ
A
mA
100
750
1.5
16N170AH1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
4.8
5.0
V
V
T
J
= 125
°
C
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
1700
V
1700
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 10
Clamped inductive load
16
A
8
A
40
A
SSOA
(RBSOA)
I
= 40
@ 0.8 V
CES
A
t
SC
P
C
T
J
= 125
°
C, V
CE
= 1200 V; V
GE
= 15 V, R
G
= 22
T
C
= 25
°
C
10
μ
s
190
W
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3)
TO-247
1.13/10Nm/lb.in.
300
°
C
250
°
C
Weight
TO-247
TO-268
6
4
g
g
TO-268 (IXGT)
G
E
High Voltage
IGBT
C (TAB)
Advance Technical Data
H1
相關PDF資料
PDF描述
IXGH16N170 High Voltage IGBT
IXGT16N170 High Voltage IGBT
IXGH17N100AU1 Low VCE(sat) IGBT with Diode High speed IGBT with Diode
IXGH17N100U1 Low VCE(sat) IGBT with Diode High speed IGBT with Diode
IXGH17N100 Low VCE(sat) IGBT, High speed IGBT
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參數描述
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