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參數資料
型號: IXGH16N170
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: High Voltage IGBT
中文描述: 32 A, 1700 V, N-CHANNEL IGBT, TO-268AA
封裝: PLASTIC, TO-268, D3PAK-3
文件頁數: 1/2頁
文件大小: 107K
代理商: IXGH16N170
2003 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700
= 32
= 3.5
= 290 ns
V
A
V
IXGH 16N170
IXGT 16N170
C (TAB)
G = Gate,
E = Emitter,
Features
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXGH)
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL
94
V-0
flammability classification
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98996(01/03)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
1700
3.0
V
V
5.0
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
50
μ
A
μ
A
500
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
T
J
= 25
°
C
T
J
= 125
°
C
2.7
3.3
3.5
V
V
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
1700
V
1700
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 10
Clamped inductive load
32
A
16
A
80
A
SSOA
(RBSOA)
I
= 40
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
T
C
= 25
°
C
190
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
°
C
260
°
C
M
d
Mounting torque (M3)
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
TO-268 (IXGT)
G
E
High Voltage
IGBT
C (TAB)
Advance Technical Data
相關PDF資料
PDF描述
IXGT16N170 High Voltage IGBT
IXGH17N100AU1 Low VCE(sat) IGBT with Diode High speed IGBT with Diode
IXGH17N100U1 Low VCE(sat) IGBT with Diode High speed IGBT with Diode
IXGH17N100 Low VCE(sat) IGBT, High speed IGBT
IXGH17N100A Low VCE(sat) IGBT, High speed IGBT
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