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參數(shù)資料
| 型號： | IXGH16N170AH1 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | High Voltage IGBT |
| 中文描述： | 16 A, 1700 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 533K |
| 代理商： | IXGH16N170AH1 |
2004 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700
= 16
= 5.0
= 40 ns
V
A
V
IXGH/IXGT 16N170A
IXGH/IXGT 16N170AH1
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
GCE
TO-247 AD
(IXGH)
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL
94
V-0
flammability classification
z
SONIC
TM
fast recovery copack diode
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS99235(10/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
CE
= V
GE
1700
3.0
V
V
5.0
I
CES
V
CE
= 0.8 V
V
GE
= 0 V, Note 1
T
J
= 125
°
C 16N170A
16N170A
16N170AH1
50
μ
A
μ
A
μ
A
mA
100
750
1.5
16N170AH1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
4.8
5.0
V
V
T
J
= 125
°
C
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
1700
V
1700
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C90
I
CM
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
V
= 15 V, T
= 125
°
C, R
G
= 10
Clamped inductive load
16
A
8
A
40
A
SSOA
(RBSOA)
I
= 40
@ 0.8 V
CES
A
t
SC
P
C
T
J
= 125
°
C, V
CE
= 1200 V; V
GE
= 15 V, R
G
= 22
T
C
= 25
°
C
10
μ
s
190
W
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque (M3)
TO-247
1.13/10Nm/lb.in.
300
°
C
250
°
C
Weight
TO-247
TO-268
6
4
g
g
TO-268 (IXGT)
G
E
High Voltage
IGBT
C (TAB)
Advance Technical Data
H1
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PDF描述 |
|---|---|
| IXGT16N170AH1 | High Voltage IGBT |
| IXGH16N170 | High Voltage IGBT |
| IXGT16N170 | High Voltage IGBT |
| IXGH17N100AU1 | Low VCE(sat) IGBT with Diode High speed IGBT with Diode |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH16N60B2 | 制造商:IXYS Corporation 功能描述:IGBT Transistors 600V 16A |
| IXGH16N60B2D1 | 功能描述:IGBT 晶體管 16 Amps 600V 2.3 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH16N60C2D1 | 功能描述:IGBT 晶體管 16 Amps 600V 3 V Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH17N100 | 功能描述:IGBT 晶體管 17 Amps 1000V 4 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH17N100A | 功能描述:IGBT 晶體管 17 Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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