- 您現在的位置：買賣IC網 > Datasheet目錄43 > MAX5930AEEG+ (Maxim Integrated)IC HOT SWAP CTLR PWR SEQ 24QSOP Datasheet資料下載
參數資料
| 型號： | MAX5930AEEG+ |
| 廠商： | Maxim Integrated |
| 文件頁數： | 18/23頁 |
| 文件大?。?/td> | 331K |
| 描述： | IC HOT SWAP CTLR PWR SEQ 24QSOP |
| 產品培訓模塊： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 標準包裝： | 50 |
| 類型： | 熱交換控制器 |
| 應用： | 通用 |
| 內部開關： | 無 |
| 電源電壓： | 1 V ~ 15 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 24-SSOP（0.154"，3.90mm 寬） |
| 供應商設備封裝： | 24-QSOP |
| 包裝： | 管件 |
Setting the Startup Period, R
TIM
The startup period (t
START
) is adjustable from 0.4ms to
50ms. The adjustable startup period feature allows sys-
tems to be customized for MOSFET gate capacitance
and board capacitance (C
BOARD
). The startup period is
adjusted with a resistor connected from TIM to GND
(R
TIM
). R
TIM
must be between 4k?and 500k? The
startup period has a default value of 9ms when TIM is left
unconnected. Calculate R
TIM
with the following equation:
where t
START
is the desired startup period.
Startup Sequence
There are two ways of completing the startup
sequence. Case A describes a startup sequence that
slowly turns on the MOSFETs by limiting the gate
charge. Case B uses the current-limiting feature and
turns on the MOSFETs as fast as possible while still
preventing a high inrush current. The output voltage
ramp-up time (t
ON
) is determined by the longer of the
two timings, case A and case B. Set the startup timer
(t
START
) to be longer than t
ON
to guarantee enough
time for the output voltage to settle.
Case A: Slow Turn-On (Without Current Limit)
There are two ways to turn on the MOSFETs without
reaching the fast-comparator current limit:
" If the board capacitance (C
BOARD
) is small, the
inrush current is low.
" If the gate capacitance is high, the MOSFETs turn
on slowly.
In both cases, the turn-on time is determined only by
the charge required to enhance the MOSFET. The
small 100礎 gate-charging current effectively limits
the output voltage dV/dt. Connecting an external
capacitor between GATE and GND extends the turn-
on time. The time required to charge/discharge a
MOSFET is as follows:
where:
C
GATE
is the external gate to ground capacitance
(Figure 9),
擵
GATE
is the change in gate charge,
Q
GATE
is the MOSFET total gate charge,
I
GATE
is the gate-charging/discharging current.
In this case, the inrush current depends on the MOSFET
gate-to-drain capacitance (C
RSS
) plus any additional
capacitance from GATE to GND (C
GATE
), and on any
load current (I
LOAD
) present during the startup period.
Example: Charging and discharging times using the
Fairchild FDB7030L MOSFET
If V
IN1
= 5V then GATE1 charges up to 10.4V (V
IN1
+
V
DRIVE
), therefore 擵
GATE
= 10.4V. The manufacturers
data sheet specifies that the FDB7030L has approxi-
mately 60nC of gate charge and C
RSS
= 600pF. The
MAX5930A/MAX5931A/MAX5931B have a 100礎 gate
charging current and a 3mA/50mA normal/strong dis-
charging current. C
BOARD
= 6礔 and the load does not
draw any current during the startup period. With no gate
capacitor, the inrush current, charge, and discharge
times are:
I
F
pF
A
A
t
V
nC
A
ms
V
nC
mA
ms
t
V
nC
mA
s
INRUSH
CHARGE
ISCHARGE NORMAL
DISCHARGE STRONG
=
?/DIV>
+
?/DIV>
+
=
=
?/DIV>
+
?/DIV>
=
=
?/DIV>
+
=
=
?/DIV>
+
=
6
600
0
100
0
1
0
10 4
60
100
0 6
0
10 4
60
3
0 02
0
10 4
60
50
1 2
.
.
.
.
.
.
(
)
(
)
?/DIV>
?/DIV>
主站蜘蛛池模板：
托里县|
巴彦淖尔市|
成都市|
连平县|
绥棱县|
弥勒县|
临沧市|
衡阳市|
长沙市|
东至县|
辽源市|
棋牌|
崇州市|
望奎县|
韶山市|
吴堡县|
英山县|
庄河市|
三台县|
五大连池市|
麦盖提县|
河津市|
万州区|
响水县|
思茅市|
从江县|
五台县|
汽车|
平谷区|
锦州市|
玛多县|
武强县|
芜湖市|
灵宝市|
揭西县|
金乡县|
曲靖市|
盐城市|
福海县|
肥西县|
鞍山市|
I
C
C
C
I
I
INRUSH
BOARD
RSS
GATE
GATE
LOAD
=
+
?/DIV>
+
t
C
V
Q
I
GATE
GATE
GATE
GATE
=
?/DIV>
+
?/DIV>
R
t
pF
TIM
START
=
?/DIV>
128 800
Low-Voltage, Triple, Hot-Swap Controllers/
Power Sequencers/Voltage Trackers
18 ______________________________________________________________________________________
COMPONENT
MANUFACTURER
PHONE
WEBSITE
Vishay
402-563-6325
www.vishay.com
Sense Resistors
IRC, Inc.
361-992-7900
www.irctt.com
Fairchild Semiconductor
888-522-5372
www.fairchildsemi.com
International Rectifier
310-322-3331
www.irf.com
MOSFETs
ON Semiconductor
602-244-6600
www.onsemi.com
Table 7. Component Manufacturers
相關PDF資料 |
PDF描述 |
|---|---|
| MAX5932ESA+T | IC HOT-SWAP CONTROLLER 8-SOIC |
| MAX5933EESA+ | IC HOT-SWAP CONTROLLER 8-SOIC |
| MAX5934EEE+ | IC HOT-SWAP CONTROLLER 16-QSOP |
| MAX5935EAX+ | IC CTRLR POWER QUAD 36-SSOP |
| MAX5937LCESA+ | IC HOT-SWAP CTRLR -48V 8-SOIC |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MAX5930AEEG+ | 功能描述:熱插拔功率分布 Triple Hot-Swap Controller RoHS:否 制造商:Texas Instruments 產品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube |
| MAX5930AEEG+T | 功能描述:熱插拔功率分布 Triple Hot-Swap Controller RoHS:否 制造商:Texas Instruments 產品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube |
| MAX5930EEG | 功能描述:熱插拔功率分布 RoHS:否 制造商:Texas Instruments 產品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube |
| MAX5930EEG+ | 功能描述:熱插拔功率分布 Integrated Circuits (ICs) RoHS:否 制造商:Texas Instruments 產品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube |
| MAX5930EEG+T | 功能描述:熱插拔功率分布 Integrated Circuits (ICs) RoHS:否 制造商:Texas Instruments 產品:Controllers & Switches 電流限制: 電源電壓-最大:7 V 電源電壓-最小:- 0.3 V 工作溫度范圍: 功率耗散: 安裝風格:SMD/SMT 封裝 / 箱體:MSOP-8 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。