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參數(shù)資料
| 型號(hào)： | MAZ8110-M |
| 廠商： | PANASONIC CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon planar type |
| 中文描述： | 11 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | S-MINI PACKAGE-2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 69K |
| 代理商： | MAZ8110-M |
1
Zener Diodes
MAZ8000
Series
Silicon planar type
For stabilization of power supply
I
Features
Extremely low noise voltage caused from the diode (2.4V to 39V,
1/3 to 1/10 of our conventional MAZ3000 series)
Extremely good rising performance (in the low-current range)
Easy-to-select the optimum diode because of their finely divided
zener-voltage ranks
Guaranteed reliability, equivalent to that of conventional products
(Mini type package)
Allowing to reduce the mounting area, thickness and weight sub-
stantially, compared with those of the conventional products
Allowing both reflow and flow mode of automatic soldering
Allowing automatic mounting by an existing chip mounter
I
Absolute Maximum Ratings
T
a
=
25
°
C
Unit : mm
Parameter
Symbol
Rating
Unit
Repetitive peak forward current
I
FRM
P
tot
200
mA
Total power dissipation
*
150
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
I
Common Electrical Characteristics
T
a
=
25
°
C
*1
Note) 1 Rated input/output frequency: 5 MHz
2 *1 : The V
Z
value is for the temperature of 25
°
C. In other cases, carry out the temperature compensation.
*2 : Guaranteed at 20 ms after power application.
*3 : T
j
= 25
°
C to 150
°
C
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Note) * : With a printed-circuit board
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
Zener voltage
*2
V
F
I
F
= 10 mA
0.9
1.0
V
V
Z
R
ZK
R
Z
I
Z··················
Specified value
I
Z··················
Specified value
I
Z··················
Specified value
V
Operating resistance
μ
A
Reverse current
I
R
S
Z
V
R···············
Specified value
I
Z··················
Specified value
Temperature coefficient of zener voltage
*3
mV/
°
C
Refer to the list of the
electrical characteristics
within part numbers
1
2
K
A
0
0
1
±
0
0
±
0
0
±
0
2.5
±
0.2
1.7
±
0.1
0.4
±
0.1
0.4
±
0.1
0
+
0
0
Marking Symbol
Refer to the list of the electrical
characteristics within part numbers
(Example) MAZ8082-H
: 8^2
Note) L/M/H marked products will be sup-
plied unless other wise specified
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| MAZ8120 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon planar type |
| MAZ81200ML | 功能描述:DIODE ZENER 12V 150MW S-MINI 2P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/齊納 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 電壓 - 齊納（標(biāo)稱）(Vz):36V 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:900mV @ 10mA 電流 - 在 Vr 時(shí)反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗（最大）(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產(chǎn)品目錄頁面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT |
| MAZ8120GML | 功能描述:DIODE ZENER 12V 150MW S-MINI 2P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/齊納 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 電壓 - 齊納（標(biāo)稱）(Vz):36V 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:900mV @ 10mA 電流 - 在 Vr 時(shí)反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗（最大）(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產(chǎn)品目錄頁面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT |
| MAZ8120-H | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon planar type |
| MAZ8120-L | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon planar type |
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