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參數資料
型號: MB84VA2103-10
廠商: FUJITSU LTD
元件分類: 存儲器
英文描述: 16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA48
封裝: PLASTIC, FBGA-48
文件頁數: 15/29頁
文件大小: 422K
代理商: MB84VA2103-10
15
MB84VA2102
-10
/MB84VA2103
-10
Erase/Program Operations (Flash)
Parameter Symbols
Note
: 1. This does not include the preprogramming time.
2. This timing is for Sector Protection Operation.
Description
-10
Unit
JEDEC
Standard
Min.
Typ.
Max.
t
AVAV
t
WC
Write Cycle Time
100
ns
t
AVWL
t
AS
Address Setup Time (WE to Addr.)
0
ns
t
AVEL
t
AS
Address Setup Time (CEf to Addr.)
0
ns
t
WLAX
t
AH
Address Hold Time (WE to Addr.)
50
ns
t
ELAX
t
AH
Address Hold Time (CEf to Addr.)
50
ns
t
DVWH
t
DS
Data Setup Time
50
ns
t
WHDX
t
DH
Data Hold Time
0
ns
t
OES
Output Enable Setup Time
0
ns
t
OEH
Output Enable Hold Time
Read
0
ns
Toggle and Data Polling
10
ns
t
GHEL
t
GHEL
Read Recover Time Before Write (OE to CEf)
0
ns
t
GHWL
t
GHWL
Read Recover Time Before Write (OE to WE)
0
ns
t
WLEL
t
WS
WE Setup Time (CEf to WE)
0
ns
t
ELWL
t
CS
CEf Setup Time (WE to CEf)
0
ns
t
EHWH
t
WH
WE Hold Time (CEf to WE)
0
ns
t
WHEH
t
CH
CEf Hold Time (WE to CEf)
0
ns
t
WLWH
t
WP
Write Pulse Width
50
ns
t
ELEH
t
CP
CEf Pulse Width
50
ns
t
WHWL
t
WPH
Write Pulse Width High
30
ns
t
EHEL
t
CPH
CEf Pulse Width High
30
ns
t
WHWH1
t
WHWH1
Programming Operation
16
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 1)
1
sec
15
sec
t
VCS
V
CC
f Setup Time
50
μs
t
VLHT
Voltage Transition Time (Note 2)
4
μs
t
VIDR
Rise Time to V
ID
(Note 2)
500
ns
t
RB
Recover Time from RY/BY
0
ns
t
RP
RESET Pulse Width
500
ns
t
RH
RESET Hold Time Before Read
200
ns
t
EOE
Delay Time from Embedded Output Enable
100
ns
t
BUSY
Program/Erase Valid to RY/BY Delay
90
ns
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