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參數資料

型號：	MB84VA2103-10
廠商：	FUJITSU LTD
元件分類：	存儲器
英文描述：	16M (x16) FLASH MEMORY & 2M (x 8) STATIC RAM
中文描述：	SPECIALTY MEMORY CIRCUIT, PBGA48
封裝：	PLASTIC, FBGA-48
文件頁數：	25/29頁
文件大小：	422K
代理商：	MB84VA2103-10

MB84VA2102

-10

/MB84VA2103

-10

Write Cycle (Note 4) (CE2s Control) (SRAM)

ODW

COE

VALID DATA IN

ADDRESSES

CE1s

OUT

CE2s

Notes:

2.If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the

output will remain at high impedance.

3.If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the

output will remain at high impedance.

4.If OE is HIGH during the write cycle, the outputs will remain at high impedance.

5.Because I/O signals may be in the output state at this Time, input signals of reverse

polarity must not be applied.

Note 5

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MB84VA2104-10	制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
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MB84VA2105-10	制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:16M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
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