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參數資料
| 型號： | MB84VP24491HK |
| 廠商： | Fujitsu Limited |
| 英文描述： | 128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM |
| 中文描述： | 128M的（x16）的快閃記憶體32M的（x16）的移動FCRAMTM |
| 文件頁數： | 3/70頁 |
| 文件大小： | 1272K |
| 代理商： | MB84VP24491HK |
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MB84VP24491HK
-70
2
(Continued)
— FLASH MEMORY
0.13
μ
m Process Technology
Dual Chip Enable (CE0f, CE1f)
CE0f controls 64M bits (Bank A and Bank B) region and CE1f controls 64M bits (Bank C and Bank D) bits region.
Single 3.0 V Read, Program and Ease
Minimized system level power requirements
Simultaneous Read/Write Operations (Dual Bank)
FlexBank
TM
*
1
Bank A(CE0f): 16 Mbit (4 KW
×
8 and 32 KW
×
31)
Bank B(CE0f): 48 Mbit (32 KW
×
96)
Bank C(CE1f): 48 Mbit (32 KW
×
96)
Bank D(CE1f): 16 Mbit (4 KW
×
8 and 32 KW
×
31)
High Performance Page Mode
20 ns maximum page access time (70 ns random access time)
8 words Page Access Capability
Minimum 100,000 Program/Erase Cycles
Sector Erase Architecture
Eight 4 Kwords, two hundred fifty-four 32 Kwords, eight 8 Kwords sectors.
Any combination of sectors can be concurrently erased. Also supports full chip erase
Dual Boot Block
Sixteen 4Kwords boot block sectors, eight at the top of the address range and eight at the bottom of the address
range
HiddenROM Region
256 byte of HiddenROM, accessible through a new “HiddenROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP/ACC Input Pin
At V
IL
, allows protection of “outermost” 2
×
4 K words on both ends of boot sectors, regardless of sector pro-
tection/unprotection status
At V
IH
, allows removal of boot sector protection
At V
ACC
, increases program performance
Embedded Erase
TM
*
2
Algorithms
Automatically preprograms and erases the chip or any sector
Embedded Program
TM
*
2
Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion
Ready/Busy Output (RY/BY)
Hardware method for detection of program or erase cycle completion
Automatic Sleep Mode
When addresses remain stable, the device automatically switches itself to low power mode
Low V
CC
Write Inhibit
≤
2.5 V
Program Suspend/Resume
Suspends the program operation to allow a read in another byte
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Hardware Reset Pin (RESET)
Hardware method to reset the device for reading array data
(Continued)
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相關代理商/技術參數 |
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|---|---|
| MB84VP24491HK-70PBS | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM |
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| MB8508S064CE-100 | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM |
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