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參數資料
| 型號： | MBC13900 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Low Noise Transistor |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 24/26頁 |
| 文件大小： | 813K |
| 代理商： | MBC13900 |
24
MBC13900 Technical Data
For More Information On This Product,
Go to: www.freescale.com
MOTOROLA
Packaging
4 Packaging
Figure 27. Outline Dimensions for SOT-343
(Case 318M-01, Issue 0)
L2
q
4X
1
q
4X
1
q
(L1)
C
SEATING PLANE
GAUGE PLANE
L
VIEW C
A-B
M
0.10
D
C
A
0.15 C
0.20 C
E1/2
E/2
E1
3X
b
E
D
D
2X
B
PIN 1 IDENTIFIER
2X
1
3
4
2
e
e
e
B
e
0
2
0.10 C
A2
A1
A
4X
S
b1
c
b
c
SECTION B-B
(SEE NOTE 7)
BASE METAL
WITH PLATING
VIEW C
B
B
DIM
A
A1
A2
b
b1
B
B1
c
c1
D
E
E1
e1
e2
e3
e4
L
L1
L2
q
q
1
MIN
MAX
1.10
0.10
1.00
0.40
0.35
0.70
0.65
0.25
0.20
MILLIMETERS
---
0.00
0.80
0.25
0.25
0.55
0.55
0.10
0.08
2.00 BSC
2.10 BSC
1.25 BSC
1.30 BSC
0.65 BSC
1.15 BSC
0.50 BSC
0.26
0.425 REF
0.15 BSC
0
4
0.46
8
10
NOTES:
1.
2.
DIMENSIONS ARE IN MILLIMETERS.
INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994.
DIMENSION D DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH,
PROTRUSIONS OR GATE BURRS SHALL NOT
EXCEED 0.15mm PER END. DIMENSION E1 DOES
NOT INCLUDE INTERLEAD FLASH OR
PROTRUSION. INTERLEAD FLASH OR PROTRUSION
SHALL NOT EXCEED 0.15mm PER SIDE.
DIMENSIONS D AND E1 ARE DETERMINED AT THE
OUTMOST EXTREMES OF THE PLASTIC BODY
EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS,
GATE BURRS AND INTERLEAD FLASH, BUT
INCLUDING ANY MISMATCH BETWEEN THE TOP
AND BOTTOM OF PLASTIC BODY.
DATUMS A, B AND D TO BE DETERMINED 0.10mm
FROM THE LEAD TIP.
TERMINAL NUMBERS ARE SHOWN FOR REFERENCE
ONLY.
THESE DIMENSIONS APPLY TO THE FLAT SECTION
OF THE LEAD BETWEEN 0.08mm AND 0.15mm FROM
THE LEAD TIP.
3.
4.
5.
6.
7.
F
Freescale Semiconductor, Inc.
n
.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBC13900/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13900NT1 | 功能描述:兩極晶體管 - BJT DISCRETE BJT PB FREE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBC13900T1 | 功能描述:IC TRANS NPN RF LOW NOISE SC70-4 RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| MBC13901 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13916 | 制造商:Freescale Semiconductor 功能描述:GAIN BLOCK 制造商:Freescale 功能描述:RF Amp Chip Single GP 2.5GHz 5V 4-Pin(3+Tab) SOT-343R |
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