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參數資料
| 型號： | MBC13900 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon Low Noise Transistor |
| 中文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數： | 3/26頁 |
| 文件大小： | 813K |
| 代理商： | MBC13900 |
Electrical Specifications
MOTOROLA
MBC13900
Technical Data
For More Information On This Product,
Go to: www.freescale.com
3
Dynamic Characteristics
Current Gain Bandwidth Product (V
CE
= 2.0 V, I
C
= 15
mA, f = 0.9 GHz)
f
τ
-
15
-
GHz
Performance Characteristic
Insertion Gain
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz
|S
21
|
2
18.5
13.5
16.5
12.5
19.5
14.5
17.5
13.5
-
-
-
-
dB
Maximum Stable Gain and/or Maximum Available Gain
[Note 2]
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz
MSG, MAG
22
18
21
17.5
23
19
22
18.5
-
-
-
-
dB
Minimum Noise Figure
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz
NF
min
-
-
-
-
0.8
0.9
0.8
0.9
0.9
1.1
0.9
1.1
dB
Associated Gain at Minimum Noise Figure
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz
V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz
V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz
G
NF
-
-
-
-
22
16
21
15
-
-
-
-
dB
Output Third Order Intercept [Note 3]
(V
CE
= 2.0 V, I
C
= 5.0 mA, f = 0.9 GHz)
(V
CE
= 2.0 V, I
C
= 5.0 mA, f = 1.9 GHz)
(V
CE
= 3.0 V, I
C
= 3.0 mA, f = 0.9 GHz)
(V
CE
= 3.0 V, I
C
= 3.0 mA, f = 1.9 GHz)
OIP3
-
-
-
-
18
21
13.5
19
-
-
-
-
dBm
NOTES:
1. Pulse width
≤
300 μs, duty cycle
≤
2% pulsed.
2. Maximum Available Gain and Maximum Stable Gain
are defined by the K factor as follows:
, if K > 1,
, if K < 1
3. Z
in
and Z
out
matched for optimum IP3.
Table 3. Electrical Characteristics (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
MAG
S12
K2
1
–
±
=
MSG
S12
=
F
Freescale Semiconductor, Inc.
n
.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBC13900/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13900NT1 | 功能描述:兩極晶體管 - BJT DISCRETE BJT PB FREE RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBC13900T1 | 功能描述:IC TRANS NPN RF LOW NOISE SC70-4 RoHS:否 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| MBC13901 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:NPN Silicon Low Noise Transistor |
| MBC13916 | 制造商:Freescale Semiconductor 功能描述:GAIN BLOCK 制造商:Freescale 功能描述:RF Amp Chip Single GP 2.5GHz 5V 4-Pin(3+Tab) SOT-343R |
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