- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369891 > MBD701 (MOTOROLA INC) 70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES PDF資料下載
參數(shù)資料
| 型號： | MBD701 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| 中文描述： | SILICON, VHF-UHF BAND, MIXER DIODE, TO-226AC |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 128K |
| 代理商： | MBD701 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector
applications. They are readily adaptable to many other fast switching RF and digital
applications. They are supplied in an inexpensive plastic package for low–cost,
high–volume consumer and industrial/commercial requirements. They are also
available in a Surface Mount package.
The Schottky Barrier Construction Provides Ultra–Stable Characteristics by
Eliminating the “Cat–Whisker” or “S–Bend” Contact
Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
Very Low Capacitance – 1.0 pF @ VR = 20 V
High Reverse Voltage – to 70 Volts
Low Reverse Leakage – 200 nA (Max)
MAXIMUM RATINGS
(TJ = 125
°
C unless otherwise noted)
MBD701
MMBD701LT1
Rating
Symbol
Value
Unit
Reverse Voltage
VR
PF
70
Volts
Forward Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
280
2.8
200
2.0
mW
mW/
°
C
Operating Junction
Temperature Range
TJ
–55 to +125
°
C
Storage Temperature Range
Tstg
–55 to +150
°
C
DEVICE MARKING
MMBD701LT1 = 5H
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage (IR = 10
μ
Adc)
Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1
Minority Carrier Lifetime (IF = 5.0 mA, Krakauer Method) Figure 2
Reverse Leakage (VR = 35 V) Figure 3
Forward Voltage (IF = 1.0 mAdc) Figure 4
Forward Voltage (IF = 10 mAdc) Figure 4
NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.
V(BR)R
CT
70
—
—
Volts
—
0.5
1.0
pF
—
15
—
ps
IR
VF
VF
—
9.0
200
nAdc
—
0.42
0.5
Vdc
—
0.7
1.0
Vdc
Thermal Clad is a registered trademark of the Berquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MBD701/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
CASE 182–02, STYLE 1
(TO–226AC)
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
2
70 VOLTS
HIGH–VOLTAGE
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
2
CATHODE
1
ANODE
1
2
3
3
CATHODE
1
ANODE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBD701LT1 | 70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
| MBD701 | Silicon Hot-Carrier Diodes |
| MBDF1200Z | 3A,20V TMOS Dual N-Channel with Monolithic Zener ESD Protected Gate(3A,20V TMOS N溝道功率MOSFET（帶單片齊納ESD保護門）) |
| MBR150 | Axial Lead Rectifiers |
| MBR160 | RO Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; Power: 1W; Industry Standard Pinout; 1kVDC & 2kVDC Isolation; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Custom Solutions Available; Efficiency to 85% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBD701_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Hot−Carrier Diodes Schottky Barrier Diodes |
| MBD701_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Hot-Carrier Diodes Schottky Barrier Diodes |
| MBD701G | 功能描述:肖特基二極管與整流器 70V 280mW RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBD701G | 制造商:ON Semiconductor 功能描述:Small Signal Diode |
| MBD701LT1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:70 VOLTS HIGH.VOLTAGE SILICON HOT.CARRIER DETECTOR AND SWITCHING DIODES |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。