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參數資料
型號: MBM29PL12LM
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁數: 34/72頁
文件大小: 1036K
代理商: MBM29PL12LM
MBM29PL12LM
10
34
Take note that other sector groups will be affected if an address other than those for the HiddenROM region is
selected for the sector group address. Pay close attention that once it is protected, protection CANNOT BE
CANCELLED.
Write Operation Status
Detailed in “Hardware Sequence Flags” are all the status flags which can determine the status of the device for
current mode operation. When checking Hardware Sequence Flags during program operations, it should be
checked 4
μ
s after issuing program command. During sector erase, the part provides the status flags automat-
ically to the I/O ports. The information on DQ
2
is address sensitive. If an address from an erasing sector is
consecutively read, then the DQ
2
bit will toggle. However DQ
2
will not toggle if an address from a non-erasing
sector is consecutively read. This allows the user to determine which sectors are erasing.
Once erase suspend is entered address sensitivity still applies. If the address of a non-erasing sector (one
available for read) is provided, then stored data can be read from the device. If the address of an erasing sector
(one unavailable for read) is applied, the device will output its status bits.
Hardware Sequence Flags
*1 : Successive reads from the erasing or erase-suspend sector will cause DQ
2
to toggle.
*2 : Reading from non-erase suspend sector address will indicate logic “1” at the DQ
2
bit.
*3 : DQ
1
indicates the Write-to-Buffer ABORT status during Write-Buffer-Programming operations.
*4 : The Data Polling algorithm detailed in “Data Polling Algorithm” in
FLOW CHART should be used for Write-
Buffer-Programming operations. Note that DQ
7
during Write-Buffer-Programming indicates the data-bar for
DQ
7
data for the LAST LOADED WRITE-BUFFER ADDRESS location.
Status
DQ
7
DQ
6
DQ
5
DQ
3
DQ
2
DQ
1
*
3
In
Progress
Embedded Program Algorithm
DQ
7
Toggle
0
0
1
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle*
1
N/A
Program
Suspend
Mode
Program-Suspend-Read
(Program Suspended Sector)
Data
Data
Data
Data
Data
Data
Program-Suspend-Read
(Non-Program Suspended Sector)
Data
Data
Data
Data
Data
Data
Erase
Suspend
Mode
Erase-Suspend-Read
(Erase Suspended Sector)
1
1
0
0
Toggle*
1
N/A
Erase-Suspend-Read
(Non-Erase Suspended Sector)
Data
Data
Data
Data
Data
Data
Erase-Suspend-Program
(Non-Erase Suspended Sector)
DQ
7
Toggle
0
0
1*
2
N/A
Exceeded
Time
Limits
Embedded Program Algorithm
DQ
7
Toggle
1
0
1
N/A
Embedded Erase Algorithm
0
Toggle
1
1
N/A
N/A
Erase
Suspend
Mode
Erase-Suspend-Program
(Non-Erase Suspended Sector)
DQ
7
Toggle
1
0
N/A
N/A
Write to
Buffer*
4
BUSY State
DQ
7
Toggle
0
N/A
N/A
0
Exceeded Timing Limits
DQ
7
Toggle
1
N/A
N/A
0
ABORT State
N/A
Toggle
0
N/A
N/A
1
相關PDF資料
PDF描述
MBM29PL12LM10PBT FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM29PL12LM10PCN FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
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MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
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