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參數資料
型號: MBM29PL12LM
廠商: Fujitsu Limited
英文描述: FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
中文描述: 快閃記憶體128米(1,600?8/8M?16)位
文件頁數: 8/72頁
文件大?。?/td> 1036K
代理商: MBM29PL12LM
MBM29PL12LM
10
8
MBM29PL12LM User Bus Operations (Byte Mode : BYTE = V
IL
)
Legend
: L = V
IL
, H = V
IH
, X = V
IL
or V
IH
. See DC Characteristics for voltage levels.
Hi-Z = High-Z, V
ID
= 11.5 to 12.5V
*1 : Manufacturer and device codes may also be accessed via a command register write sequence.
See “MBM29PL12LM Standard Command Definitions”.
*2 : Refer to Sector Group Protection.
*3 : Protects the first 64K bytes sectors
*4 : D
IN
or D
OUT
as required by command sequence, data polling, or sector protect algorithm
*5 : If WP/ACC = V
IL
, the first sector remain protected.
If WP/ACC = V
IH
, the first sector will be protected or unprotected as determined by the method
specified in "Sector Group Protection".
Operation
CE OE WEA
15
/
-1
A
0
A
1
A
2
A
3
A
6
A
9
DQ
0
to
DQ
7
RESET
WP/
ACC
Standby
H
X
X
X
X
X
X
X
X
X
Hi-Z
H
X
Autoselect Manufacture Code*
1
L
L
H
L
L
L
L
L
L
V
ID
Code
H
X
Autoselect Device Code*
1
L
L
H
L
H
L
L
L
L
V
ID
Code
H
X
Read
L
L
H
A
-1
A
0
A
1
A
2
A
3
A
6
A
9
D
OUT
H
X
Output Disable
L
H
H
X
X
X
X
X
X
X
Hi-Z
H
X
Write (Erase)
L
H
L
A
-1
A
0
A
1
A
2
A
3
A
6
A
9
*4
H
*5
Enable Sector Group Protection*
2
L
H
L
L
L
H
L
L
L
X
*4
V
ID
H
Temporary Sector Group
Unprotection
X
X
X
X
X
X
X
X
X
X
*4
V
ID
H
Reset (Hardware)
X
X
X
X
X
X
X
X
X
X
Hi-Z
L
X
Sector Write Protection*
3
X
X
X
X
X
X
X
X
X
X
X
H
L
相關PDF資料
PDF描述
MBM29PL12LM10PBT FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM29PL12LM10PCN FLASH MEMORY 128 M (16M ?8/8M ?16) BIT
MBM30LV0064-PFTN 64M (8M X 8) BIT NAND-type
MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
MBM30LV0032 32M (4M X 8) BIT NAND-type
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