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參數資料
型號: MBM30LV0064-PFTN
廠商: FUJITSU LTD
元件分類: DRAM
英文描述: 64M (8M X 8) BIT NAND-type
中文描述: 8M X 8 FLASH 3.3V PROM, 7000 ns, PDSO40
封裝: 0.80 MM PITCH, PLASTIC, TSOP2-44/40
文件頁數: 17/43頁
文件大小: 397K
代理商: MBM30LV0064-PFTN
MBM30LV0064
17
(Continued)
Notes: 1. AC Test Conditions:
2. The time to go from CE high to Ready depends on the pull-up resister of the R/B pin (see Application
Notes (6)) toward the end of this document.
3. In case that toggling CE to high after access to the last address (address 527) in the resister in the read
mode (1), (2), and (3), the CE high time must be held for 100 ns or more when the delay time of CE with
respect to RE is 0 to 200 ns (see the figure below). When the CE delay time is within 30 ns, the device
is kept in the Ready state and will output no Busy signal.
Parameter
Symbol
Value
Unit
Min.
Max.
ALE Low to RE Low (Read Cycle)
t
AR2
50
ns
RE Last Clock Rising Edge to Busy (in Sequential Read)
t
RB
100
ns
CE High to Ready (in Case of Interception by CE in Read Mode)
(Note 2)
t
CRY
50 + tr
(R/B)
ns
Device Resetting Time (Read/Program/Erase)
t
RST
5/10/500
μ
s
Operating range
V
CC
= 2.7 to 3.6 V
V
CC
= 3.0 to 3.6 V
Input level
2.4 V/0.4 V
Input comparison level
1.5 V/1.5 V
Output data comparison level
1.5 V/1.5 V
Output load
1TTL
Load capacitance (C
L
)
50 pF
100 pF
Transition time (t
T
)
5 ns
相關PDF資料
PDF描述
MBM30LV0064-PFTR 64M (8M X 8) BIT NAND-type
MBM30LV0032 32M (4M X 8) BIT NAND-type
MBM30LV0032-PFTN 32M (4M X 8) BIT NAND-type
MBM30LV0032-PFTR RES 150-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA
MBM30LV0064 64M (8M X 8) BIT NAND-type
相關代理商/技術參數
參數描述
MBM30LV0064-PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:64M (8M X 8) BIT NAND-type
MBM30LV0128 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:128 M (16 M X 8) BIT NAND-type
MBM30LV0128-PFTN 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:128 M (16 M X 8) BIT NAND-type
MBM30LV0128-PFTR 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:128 M (16 M X 8) BIT NAND-type
MBM31048901 制造商:LG Corporation 功能描述:Card
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