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參數資料
| 型號： | MBR350RLG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 67K |
| 代理商： | MBR350RLG |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 6
1
Publication Order Number:
MBR350/D
MBR350, MBR360
MBR360 is a Preferred Device
Axial Lead Rectifiers
These devices employ the Schottky Barrier principle in a large area
metaltosilicon power diode. Stateoftheart geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in lowvoltage,
highfrequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
Extremely Low v
F
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Low Stored Charge, Majority Carrier Conduction
PbFree Packages are Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.1 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
°
C Max. for 10 Seconds
Polarity: Cathode indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR350
MBR360
V
RRM
V
RWM
V
R
50
60
3.0
V
Average Rectified Forward Current T
A
= 65
°
C
(R
JA
= 28
°
C/W, P.C. Board Mounting)
NonRepetitive Peak Surge Current (Note 1)
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz, T
L
= 75
°
C)
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
I
O
A
I
FSM
80
A
T
J
, T
stg
65 to
+150
°
C
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoAmbient
(see Note 4 Mounting Data, Mounting Method 3)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32 in from case.
R
JA
28
°
C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
AXIAL LEAD
CASE 26705
(DO201AD)
STYLE 1
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
50, 60 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
A
MBR
3x0
A
x
= Assembly Location
= 5 or 6
= PbFree Package
(Note: Microdot may be in either location)
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR350TR | 功能描述:DIODE SCHOTTKY 50V 3A C-16 RoHS:是 類別:分離式半導體產品 >> 單二極管/整流器 系列:- 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復 = 200mA（Io） 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| MBR350TR-M3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 3 A |
| MBR351 | 制造商:DCCOM 制造商全稱:Dc Components 功能描述:TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER |
| MBR3510 | 制造商:HY 制造商全稱:HY ELECTRONIC CORP. 功能描述:SILICON BRIDGE RECTIFIERS |
| MBR35100 | 功能描述:肖特基二極管與整流器 100V - 35A Schottky Rectifier RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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