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參數資料
| 型號： | MBR40H35CT |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual Schottky Barrier Rectifiers |
| 中文描述： | 雙肖特基 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 34K |
| 代理商： | MBR40H35CT |
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
MBR40H35PT MBR40H45PT MBR40H50PT MBR40H60PT
Unit
Maximum repetitive peak reverse voltage
V
RRM
35
45
50
60
V
Maximum working peak reverse voltage
V
RWM
35
45
50
60
V
Maximum DC blocking voltage
V
DC
35
45
50
60
V
Maximum average forward rectified current
(See Fig. 1)
I
F(AV)
40
A
Peak repetitive forward current per leg at T
C
= 155 °C
(rated V
R
, square wave, 20 KH
Z
)
I
FRM
40
A
Non-repetitive avalanche energy per leg
at 25
°
C, I
AS
= 4 A, L = 10 mH
E
AS
80
mJ
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current
(1)
I
FSM
400
A
I
RRM
2.0
1.0
A
Peak non-repetitive reverse energy (8/20 μs waveform)
E
RSM
30
25
mJ
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 k
V
C
25
kV
Thermal resistance from junction to case per leg
R
θ
JC
1.2
°C/W
Voltage rate of change at (rated V
R
)
dv/dt
10,000
V/
μ
s
Operating junction temperature range
T
J
–65 to +175
°C
Storage temperature range
T
STG
–65 to +175
°C
Features
Plastic package has Underwriters Laboratory
Flammability Classifications 94 V-0
Dual rectifier construction, positive center-tap
Metal silicon junction, majority carrier conduction
High surge capability
Low forward voltage drop, low power loss
and high efficiency
For use in low voltage, high frequency inverters,
free-wheeling, and polarity protection applications
Guardring for overvoltage protection
Rated for reverse surge and ESD
175 °C maximum operation junction temperature
Mechanical Data
Case:
JEDEC TO-247AD molded plastic body
Terminals:
Lead solderable per MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3 mm) from case
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs max.
Weight:
0.2 oz., 5.6 g
PIN 1
PIN 3
CASE
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.142 (3.6)
0.138 (3.5)
0.170
0.086 (2.18)
0.076 (1.93)
0.160 (4.1)
0.140 (3.5)
0.225 (5.7)
0.205 (5.2)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
0.795 (20.2)
0.775 (19.6)
0.840 (21.3)
0.820 (20.8)
1
2
3
0.078 REF
(1.98)
0.203 (5.16)
0.193 (4.90)
10 TYP.
BOTH SIDES
30
10
°
1 REF.
BOTH
SIDES
0.118 (3.0)
0.108 (2.7)
0.030 (0.76)
0.020 (0.51)
PIN 2
TO-247AD (TO-3P)
MBR40H35PT thru MBR40H60PT
Vishay Semiconductors
formerly General Semiconductor
Document Number 88794
4-Feb-03
www.vishay.com
1
New Product
Dual Schottky Barrier Rectifier
Reverse Voltage
35 to 60 V
Forward Current
40 A
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| MBR40H45CT | Dual Schottky Barrier Rectifiers |
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| MBR60100CT | Dual High-Voltage Schottky Rectifiers |
| MBR60100PT | 60.0 AMPS. Schottky Barrier Rectifiers |
| MBR6035PT | CAP 1.0UF 16V 10% X7R SMD-1206 T&R-7IN-PL NI-SN |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBR40H35CT_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifiers |
| MBR40H35CT-E3 | 制造商:Vishay Intertechnologies 功能描述: |
| MBR40H35CT-E3/45 | 功能描述:肖特基二極管與整流器 35 Volt 40A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBR40H35PT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Schottky Barrier Rectifier |
| MBR40H35PT-E3/45 | 功能描述:肖特基二極管與整流器 40 Amp 35 Volt Dual 400 Amp IFSM RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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