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參數(shù)資料
| 型號： | MBRB1535CT-13 |
| 廠商： | DIODES INC |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 35 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 83K |
| 代理商： | MBRB1535CT-13 |
DS13015 Rev. 3 - 2
1 of 3
MBRB1530CT-MBRB1545CT
www.diodes.com
Diodes Incorporated
MBRB1530CT - MBRB1545CT
15A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Case: D2PAK
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Bright Tin. Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Marking: See Page 3
Weight: 1.7 grams (approximate)
Mechanical Data
B
C
D
E
G
H
J
K
L
M
A
123
4
PIN 1
PIN 3
PIN2&4
D2PAK
Dim
Min
Max
A
9.65
10.69
B
14.60
15.88
C
0.51
1.14
D
2.29
2.79
E
4.37
4.83
G
1.14
1.40
H
1.14
1.40
J
8.25
9.25
K
0.30
0.64
L
2.03
2.92
M
2.29
2.79
All Dimensions in mm
Characteristic
Symbol
MBRB
1530CT
MBRB
1535CT
MBRB
1540CT
MBRB
1545CT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30
35
40
45
V
RMS Reverse Voltage
VR(RMS)
21
24.5
28
31.5
V
Average Rectified Output Current
@ TC = 105°C
IO
15
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
150
A
Forward Voltage, per Element (Note 4)
@ IF = 7.5A
VFM
0.7
V
Voltage Rate of Change
dv/dt
10,000
V/s
Peak Reverse Current
@ TA = 25°C
at Rated DC Blocking Voltage
@ TA = 100°C
IRM
0.1
15
mA
Maximum Recovery Time (Note 3)
trr
30
ns
Typical Junction Capacitance (Note 2)
Cj
250
pF
Typical Thermal Resistance Junction to Terminal (Note 1)
RqJT
3.0
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1.
Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink.
2.
Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3.
Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A (see figure 1).
4.
300s pulse width, 2% duty cycle.
5.
RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 150A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 5)
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