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參數資料
| 型號： | MBT35200MT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
| 中文描述： | 2000 mA, 35 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 318G-02, TSOP-6 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 81K |
| 代理商： | MBT35200MT1 |
MBT35200MT1
http://onsemi.com
3
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
0.001
I
C
, COLLECTOR CURRENT (AMPS)
0.1
0.01
I
C
, COLLECTOR CURRENT (AMPS)
0.1
1.0
0.001
0.05
0
0.001
0.01
0.1
1.0
0.01
0.10
0.15
I
C
/I
B
= 100
0.20
0.25
100
°
C
25
°
C
-55
°
C
50
10
VC
V
VC
V
I
C
/I
B
= 50
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
Figure 5. Base Emitter Turn–On Voltage
versus Collector Current
Figure 6. Input Capacitance
0.1
1.0
0.001
I
C
, COLLECTOR CURRENT (AMPS)
1.6
0.4
1.0
0.2
0
I
C
, COLLECTOR CURRENT (AMPS)
0.01
0.001
1.0
0.4
0
0.1
0.001
I
C
, COLLECTOR CURRENT (AMPS)
1.1
0.6
0.5
0.4
0.3
V
EB
, EMITTER BASE VOLTAGE (VOLTS)
0
750
550
500
450
350
300
1.5
0.01
h
VB
0.01
0.1
1.0
,
VB
1.0
0.9
0.5
5.0
1.0
400
Ci
1.2
0.6
0.8
1.4
100
°
C
0.6
0.8
V
700
650
600
25
°
C
-55
°
C
0.2
100
°
C
25
°
C
-55
°
C
0.8
0.7
1.0
100
°
C
25
°
C
-55
°
C
3.0
2.0
2.5
3.5
4.0
4.5
F
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MBT35200MT1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
| MBT35200MT1G | 功能描述:兩極晶體管 - BJT Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT35200MT1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MBT35200MT2G | 功能描述:兩極晶體管 - BJT TSOP6 PNP XSTR SPCL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3904DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+NPN Silicon |
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