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參數資料
| 型號： | MBT3904DW1T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual General Purpose Transistors(雙NPN通用晶體管) |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-88, 6 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 105K |
| 代理商： | MBT3904DW1T3 |
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 4
1
Publication Order Number:
MBT3904DW1T1/D
MBT3904DW1T1,
MBT3904DW2T1
Dual General Purpose
Transistors
The MBT3904DW1T1 and MBT3904DW2T1 devices are a
spinoff of our popular SOT23/SOT323 threeleaded device. It is
designed for general purpose amplifier applications and is housed in
the SOT363 sixleaded surface mount package. By putting two
discrete devices in one package, this device is ideal for lowpower
surface mount applications where board space is at a premium.
Features
h
FE
, 100300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7inch/3,000 Unit Tape and Reel
PbFree Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CEO
40
Vdc
CollectorBase Voltage
V
CBO
60
Vdc
EmitterBase Voltage
V
EBO
6.0
Vdc
Collector Current Continuous
I
C
200
mAdc
Electrostatic Discharge
ESD
HBM>16000,
MM>2000
V
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERAML CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Package Dissipation (Note 1)
T
A
= 25
°
C
P
D
150
mW
Thermal Resistance,
JunctiontoAmbient
R
JA
833
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
°
C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
Device
Package
Shipping
ORDERING INFORMATION
MBT3904DW1T1
SOT363
SOT363/SC88/
SC706
CASE 419B
3000 Units/Reel
Q
1
(1)
(2)
(3)
(4)
(5)
(6)
Q
2
MBT3904DW1T1
STYLE 1
http://onsemi.com
1
6
XX
d
1
6
MARKING
DIAGRAM
XX=MA for MBT3904DW1T1
MJ for MBT3904DW2T1
d
=Date Code
Q
1
(1)
(2)
(3)
(4)
(5)
Q
2
MBT3904DW2T1
STYLE 27
(6)
MBT3904DW2T1
SOT363
3000 Units/Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MBT3904DW1T1G
SOT363
(PbFree)
3000 Units/Reel
MBT3904DW2T1G
SOT363
(PbFree)
3000 Units/Reel
相關PDF資料 |
PDF描述 |
|---|---|
| MBT3904DW1T1 | Dual General Purpose Transistors |
| MBT3946DW1T1 | Dual General Purpose Transistors |
| MBT3946DW1T1 | Dual General Purpose Transistor |
| MBT3946DW1T1G | Dual General Purpose Transistor |
| MBT3946DW1T2 | Dual General Purpose Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MBT3904DW1T3G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3904DW2T1 | 功能描述:兩極晶體管 - BJT 200mA 60V Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3904DW2T1G | 功能描述:兩極晶體管 - BJT 200mA 60V Dual NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MBT3904-TF | 制造商:Samsung Semiconductor 功能描述:3904-TF |
| MBT3906DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor PNP+PNP Silicon |
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