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參數資料
型號: MBT3946DW1T2
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Dual General Purpose Transistor
中文描述: 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 419B-02, SC-88, 6 PIN
文件頁數: 1/10頁
文件大小: 422K
代理商: MBT3946DW1T2
LESHAN RADIO COMPANY, LTD.
MBT3904–1/12
1
3
2
Dual General Purpose Transistors
MAXIMUM RATINGS
Rating
Symbol
Voltage
Unit
Collector–Emitter Voltage
V
CEO
V
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Collector–Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Emitter–Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Collector Current
-
Continuous
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Electrostatic Discharge
40
–40
V
CBO
V
60
–40
V
EBO
V
6.0
–5.0
I
C
mAdc
200
–200
ESD
HBM>16000,
MM>2000
V
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation(1)
T
A
= 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage
Temperature
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
Symbol
P
D
Max
150
Unit
mW
R
θ
JA
833
°C/W
T
J
, T
stg
–55 to +150
°C
See Table
6
4
5
SOT–363/SC–88
CASE 419B STYLE 1
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
MBT3904DW1T1
MBT3906DW1T1
1
3
2
6
4
5
Q
1
Q
2
1
3
2
6
4
5
Q
1
Q
2
MBT3946DW1T1
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these devices
are ideal for low–power surface mount applications where board space is at a premium.
h
FE
, 100–300
Low V
CE(sat)
,
3
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
1
3
2
6
4
5
Q
1
Q
2
*Q
1
same as MBT3906DW1T1
Q
2
same as MBT3904DW1T1
ORDERING INFORMATION
Device
Package
MBT3904DW1T1
SOT–363
MBT3906DW1T1
SOT–363
MBT3946DW1T1
SOT–363
Shipping
3000 Units/Reel
3000 Units/Reel
3000 Units/Reel
相關PDF資料
PDF描述
MBT3946DW1T2G Dual General Purpose Transistor
MC-4216LFC721 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的動態RAM模塊)
MC-4216LFC72 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的動態RAM模塊)
MC-4216LFF721 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊)
MC-4216LFF72 16M-Word By 72-BIT Dynamic RAM Module(動態RAM模塊)
相關代理商/技術參數
參數描述
MBT3946DW1T2G 功能描述:兩極晶體管 - BJT 200mA 40V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MBT42N 制造商:APEM 功能描述:Switch Slide 4PDT Extended Top Slide 0.3A 125VAC 30VDC PC Pins Bracket Mount/Through Hole
MBT5401 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON P-N-P HIGH-VOLTAGE TRANSISTOR
MBT5S 制造商:HellermannTyton 功能描述:CABLE TIE STEEL 127X4.6MM PK100 制造商:HellermannTyton 功能描述:CABLE TIE, STEEL, 127X4.6MM, PK100 制造商:HELLERMANN TYTON 功能描述:CABLE TIE, STEEL, 127X4.6MM, PK100; Cable Tie Length:127mm; Cable Tie Width:4.6mm; Cable Tie Material:Stainless Steel; Cable Tie Colour:Natural; Tensile Strength N/m2:900N/m2; Cable Bundle Diameter Max:25mm; SVHC:No SVHC ;RoHS Compliant: Yes 制造商:HellermannTyton 功能描述:Cable Ties Self Locking Stainless Steel Bag
MBT5SFC 制造商:HellermannTyton 功能描述:CABLE TIE STEEL 127X7.9MM PK100 制造商:HellermannTyton 功能描述:CABLE TIE, STEEL, 127X7.9MM, PK100
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