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參數資料
型號: MC-4216LFF721
廠商: NEC Corp.
英文描述: 3.3 V Operation 8M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊)
中文描述: 3.3 V工作電壓800萬字由72位動態內存模塊(工作電壓為3.3伏的內存模塊)
文件頁數: 1/32頁
文件大小: 290K
代理商: MC-4216LFF721
1996
MOS INTEGRATED CIRCUIT
MC-4216LFF721
3.3 V OPERATION 16M-WORD BY 72-BIT DYNAMIC RAM MODULE
UNBUFFERED TYPE, EDO
DATA SHEET
The mark
shows major revised points.
Document No. M11908EJ4V0DS00 (4th edition)
Date Published October 1997 NS
Printed in Japan
The information in this document is subject to change without notice.
Description
The MC-4216LFF721 is a 16,777,216 words by 72 bits dynamic RAM module on which 18 pieces of 64M DRAM :
μ
PD4264405 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
Unbuffered type
EDO (Hyper page mode)
16,777,216 words by 72 bits organization
Fast access and cycle time
Family
Access time
R/W cycle time
EDO (Hyper page mode)
Power consumption (MAX.)
(MAX.)
(MIN.)
cycle time (MIN.)
Active
Standby
MC-4216LFF721-A50
50 ns
84 ns
20 ns
6.48 W
32.4 mW
MC-4216LFF721-A60
60 ns
104 ns
25 ns
5.83 W
(CMOS level input)
Refresh cycle
Family
Refresh cycle
Refresh
MC-4216LFF721-A50
8,192 cycles / 64 ms
/RAS only refresh, Normal read / write
MC-4216LFF721-A60
4,096 cycles / 64 ms
/CAS before /RAS refresh, Hidden refresh
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Single +3.3 V ± 0.3 V power supply
Serial PD
相關PDF資料
PDF描述
MC-4216LFF72 16M-Word By 72-BIT Dynamic RAM Module(動態RAM模塊)
MC-4216LFG641 3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的動態RAM模塊)
MC-4216LFH641 3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的DRAM模塊)
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