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參數資料
| 型號： | MC-424LFG641 |
| 廠商： | NEC Corp. |
| 英文描述： | 64 bits dynamic RAM modules(64 位動態RAM 模塊) |
| 中文描述： | 64位動態RAM模塊（64位動態內存模塊） |
| 文件頁數： | 1/44頁 |
| 文件大小： | 368K |
| 代理商： | MC-424LFG641 |
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1996
MOS INTEGRATED CIRCUIT
MC-424LFG641
3.3 V OPERATION 4M-WORD BY 64-BIT DYNAMIC RAM MODULE
UNBUFFERED TYPE, EDO
DATA SHEET
The mark
shows major revised points.
Document No. M11687EJ7V0DS00 (7th edition)
Date Published October 1997 NS
Printed in Japan
The information in this document is subject to change without notice.
Description
The MC-424LFG641F and MC-424LFG641FW are a 4,194,304 words by 64 bits dynamic RAM modules on which
16 pieces of 16M DRAM (
μ
PD4216405L), and 4 pieces of 64M DRAM (
μ
PD4265165) are assembled, respectively.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
Unbuffered type
EDO (Hyper page mode)
4,194,304 words by 64 bits organization
Fast access and cycle time
Family
Access time
R/W cycle time
EDO (Hyper page mode)
Power consumption (MAX.)
(MAX.)
(MIN.)
cycle time (MIN.)
Active
Standby
MC-424LFG641F-A60
60 ns
104 ns
25 ns
4.61 W
28.8 mW
MC-424LFG641F-A70
70 ns
124 ns
30 ns
4.03 W
(CMOS level input)
MC-424LFG641FA-A60
60 ns
104 ns
25 ns
4.61 W
MC-424LFG641FA-A70
70 ns
124 ns
30 ns
4.03 W
MC-424LFG641FW-A50
50 ns
84 ns
20 ns
2.16 W
7.2 mW
MC-424LFG641FW-A60
60 ns
104 ns
25 ns
1.88 W
(CMOS level input)
Refresh cycle
Family
Refresh cycle
Refresh
MC-424LFG641-A50
4,096 cycles / 64 ms
/RAS only refresh, Normal read / write, /CAS before /RAS refresh,
MC-424LFG641-A60
Hidden refresh
MC-424LFG641-A70
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Single +3.3 V ± 0.3 V power supply
Serial PD
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| MC-428LFC72 | 3.3 V Operation 4M-Word By 64-Bit Dynamic RAM Module(工作電壓為3.3V的動態RAM模塊) |
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