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參數(shù)資料
型號(hào): MC-4216LFG641
廠商: NEC Corp.
英文描述: 3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作電壓為3.3V的動(dòng)態(tài)RAM模塊)
中文描述: 3.3 V工作電壓1,600由72字位動(dòng)態(tài)RAM模塊(工作電壓為3.3伏的動(dòng)態(tài)內(nèi)存模塊)
文件頁數(shù): 1/32頁
文件大小: 279K
代理商: MC-4216LFG641
1996
MOS INTEGRATED CIRCUIT
MC-4216LFG641
3.3 V OPERATION 16M-WORD BY 64-BIT DYNAMIC RAM MODULE
UNBUFFERED TYPE, EDO
DATA SHEET
The mark
shows major revised points.
Document No. M11905EJ4V0DS00 (4th edition)
Date Published October 1997 NS
Printed in Japan
The information in this document is subject to change without notice.
Description
The MC-4216LFG641 is a 16,777,216 words by 64 bits dynamic RAM module on which 16 pieces of 64M DRAM :
μ
PD4265405 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
Unbuffered type
EDO (Hyper page mode)
16,777,216 words by 64 bits organization
Fast access and cycle time
Family
Access time
R/W cycle time
EDO (Hyper page mode)
Power consumption (MAX.)
(MAX.)
(MIN.)
cycle time (MIN.)
Active
Standby
MC-4216LFG641-A50
50 ns
84 ns
20 ns
7.49 W
28.8 mW
MC-4216LFG641-A60
60 ns
104 ns
25 ns
6.34 W
(CMOS level input)
Refresh cycle
Family
Refresh cycle
Refresh
MC-4216LFG641-A50
4,096 cycles / 64 ms
/RAS only refresh, Normal read / write, /CAS before /RAS refresh,
MC-4216LFG641-A60
Hidden refresh
168-pin dual in-line memory module (Pin pitch = 1.27 mm)
Single +3.3 V ± 0.3 V power supply
Serial PD
相關(guān)PDF資料
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