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參數資料
| 型號： | MBT3906DW1T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual General Purpose Transistor |
| 中文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-70, SC-88, 6 PIN |
| 文件頁數： | 4/6頁 |
| 文件大小： | 111K |
| 代理商： | MBT3906DW1T1G |
MBT3906DW1T1
http://onsemi.com
4
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25
°
C, Bandwidth = 1.0 Hz)
Figure 7.
f, FREQUENCY (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 8.
R
g
, SOURCE RESISTANCE (k OHMS)
0
N
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
N
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 A
I
C
= 100 A
SOURCE RESISTANCE = 200
I
C
= 1.0 mA
SOURCE RESISTANCE = 200
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 100 A
SOURCE RESISTANCE = 2.0 k
I
C
= 50 A
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25
°
C)
Figure 9. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h
f
h
o
Figure 11. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.3
0.5
3.0
0.7
2.0
5.0
10
20
1.0
0.7
0.2
0.5
h
i
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
7
5
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
70
30
0.7
7.0
0.7
7.0
7.0
3.0
0.3
0.7
7.0
0.7
7.0
h
r
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相關代理商/技術參數 |
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|---|---|
| MBT3906DW1T1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual General Purpose Transistor |
| MBT3906DW1T2G | 制造商:ON Semiconductor 功能描述:SS SC88 GP XSTR PNP 40V - Tape and Reel 制造商:ON Semiconductor 功能描述:Dual PNP Bipolar Transistor 制造商:ON Semiconductor 功能描述:REEL - SS SC88 GP XSTR PNP 40V |
| MBT3906DW1T3 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel 制造商:ON Semiconductor 功能描述: |
| MBT3946DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
| MBT3946DW1T1 | 功能描述:兩極晶體管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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