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參數資料
| 型號： | MC-4516CC725 |
| 廠商： | NEC Corp. |
| 英文描述： | 16M-Word By 64-BIT Dynamic RAM Module(動態RAM模塊) |
| 中文描述： | 1,600詞，64位動態RAM模塊（動態內存模塊） |
| 文件頁數： | 1/16頁 |
| 文件大小： | 148K |
| 代理商： | MC-4516CC725 |
1998
MOS INTEGRATED CIRCUIT
MC-4516CC725
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE
UNBUFFERED TYPE
DATA SHEET
Document No. M13319EJ3V0DS00 (3rd edition)
Date Published August 1998 NS CP (K)
Printed in Japan
The information in this document is subject to change without notice.
The mark
shows major revised points.
Description
The MC-4516CC725 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of
64M SDRAM:
μ
PD4564841
(Rev. E) are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 72 bits organization (ECC type)
Clock frequency and clock access time
Family
/CAS latency
Clock frequency
Clock access time
Power consumption (MAX.)
(MAX.)
(MAX.)
Active
Standby
MC-4516CC725-A10B
CL = 3
100 MHz
7 ns
4,536 mW
32.4 mW
CL = 2
67 MHz
8 ns
4,212 mW
(CMOS level input)
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length: 1, 2, 4, 8 and full page
Programmable wrap sequence (sequential
/
interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
All DQs have 10
±
10
% of series resistor
Single 3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles / 64
ms
Burst termination by Burst Stop command and Precharge command
168-pin dual in-line memory module (Pin pitch = 1.27
mm)
Unbuffered type
Serial PD
相關PDF資料 |
PDF描述 |
|---|---|
| MC-4516CC726 | 16M-Word By 72-BIT Dynamic RAM Module(16M×72位動態RAM模塊) |
| MC-4516CD641ES-A10 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A80 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MC-4516CD641ES | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
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