- 您現在的位置：買賣IC網 > PDF目錄382301 > MC2GH512NMCA-2SA00 (SAMSUNG SEMICONDUCTOR CO. LTD.) SAMSUNG MultiMediaCard PDF資料下載
參數資料
| 型號： | MC2GH512NMCA-2SA00 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | SAMSUNG MultiMediaCard |
| 中文描述： | 三星多媒體 |
| 文件頁數： | 29/102頁 |
| 文件大小： | 1384K |
| 代理商： | MC2GH512NMCA-2SA00 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁當前第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁第94頁第95頁第96頁第97頁第98頁第99頁第100頁第101頁第102頁
MultiMediaCard
TM
29
Sep.22.2005
Revision 0.3
VDD_R_CURR_MAX, VDD_W_CURR_MAX
The maximum values for read and write currents at the maximal power supply V
DD
are coded as follows:
The values in these fields are valid when the card is not in high speed mode. When the card is in high speed mode, the
current consumption is chosen by the host, from the power classes defined in the PWR_ff_vvv registers, in the EXT_CSD
register.
C_SIZE_MULT
This parameter is used for coding a factor MULT for computing the total device size (see ‘C_SIZE’). The factor MULT is
defined as 2
C_SIZE_MULT+2
.
ERASE_GRP_SIZE
The contents of this register is a 5 bit binary coded value, used to calculate the size of the erasable unit of the card. The
size of the erase unit (also referred to as erase group) is determined by the ERASE_GRP_SIZE and the
ERASE_GRP_MULT entries of the CSD, using the following equation:
size of erasable unit = (ERASE_GRP_SIZE + 1) * (ERASE_GRP_MULT + 1)
This size is given as minimum number of write blocks that can be erased in a single erase command.
ERASE_GRP_MULT
A 5 bit binary coded value used for calculating the size of the erasable unit of the card. See ERASE_GRP_SIZE section
for detailed description.
WP_GRP_SIZE
The size of a write protected group. The contents of this register is a 5 bit binary coded value, defining the number of erase
groups which can be write protected. The actual size is computed by increasing this number by one. A value of zero
means 1 erase group, 31 means 32 erase groups.
VDD_R_CURR_MAX
VDD_W_CURR_MAX
2:0
Code for current consumption @ V
DD
0=1mA; 1=5mA; 2=10mA; 3=25mA; 4=35mA; 5=45mA; 6=80mA; 7=200mA
C_SIZE_MULT
0
MULT
2
2
= 4
2
3
= 8
2
4
= 16
2
5
= 32
2
6
= 64
2
7
= 128
2
8
= 256
2
9
= 512
1
2
3
4
5
6
7
相關PDF資料 |
PDF描述 |
|---|---|
| MC4GH01GNMCA-2SA00 | SAMSUNG MultiMediaCard |
| MC4GH02GNMCA-2SA00 | SAMSUNG MultiMediaCard |
| MC206 | THIN SMD LOW/MEDIUM-FREQUENCY CRYSTAL UNIT |
| MC2300 | Navigator Motion Processor |
| MC26LS30 | Dual Differential Quad Single-Ended (EIA-423-A) Line Drivers |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MC2GU01GNMCA-0QC00 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MultiMediaCard Specification |
| MC2GU512NMCA-0QC00 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MultiMediaCard Specification |
| MC2M | 制造商:G & J HALL 功能描述:STEP DRILL 10-20MM 1MM STEP 制造商:G & J HALL 功能描述:STEP DRILL, 10-20MM, 1MM STEP 制造商:G & J HALL 功能描述:STEP DRILL, 10-20MM, 1MM STEP; Drill Bit Size Metric:10mm; Overall Length:77.5mm; SVHC:No SVHC (19-Dec-2012); Drill Bit Type:Step; Material:Steel; Material Thickness Max:4mm; Range:10mm - 20mm; Range:10mm - 20mm; Shank Dia:9mm; ;RoHS Compliant: NA |
| MC2N2906A | 制造商:SPC Multicomp 功能描述:BIPOLAR TRANSISTOR, PNP, -60V TO-18; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Transition Frequency Typ ft:200MHz; Power Dissipation Pd:400mW; DC Collector Current:-600mA; DC Current Gain hFE:40; No. of Pins:3;RoHS Compliant: Yes |
| MC3 | 制造商:Omron Corporation 功能描述:CONTROLLER,DIN MOUNT,24 VDC,SAFETY MAT CONTROLLER 制造商:Carlo Gavazzi 功能描述:MAGNETIC RECTANGULAR PROX. SENSOR |
發布緊急采購，3分鐘左右您將得到回復。