
MC74VHCT00A
http://onsemi.com
4
The qJA of the package is equal to 1/Derating. Higher junction temperatures may affect the expected lifetime of the device per the table and
figure below.
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=
80
C°
T J
=
90
C°
T J
=
100
C°
T J
=
1
10
C°
T J
=
130
C°
T J
=
120
C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 4. Failure Rate vs. Time
Junction Temperature
DC ELECTRICAL CHARACTERISTICS
VCC
TA = 25°C
TA ≤ 85°C
TA ≤ 125°C
Symbol
Parameter
Test Conditions
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
VIH
Minimum HighLevel
Input Voltage
3.0
4.5
5.5
1.4
2.0
1.4
2.0
1.4
2.0
V
VIL
Maximum LowLevel
Input Voltage
3.0
4.5
5.5
0.53
0.8
0.53
0.8
0.53
0.8
V
VOH
Minimum HighLevel
Output Voltage
VIN = VIH or VIL
IOH = 50 μA
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
VIN = VIH or VIL
IOH = 4 mA
IOH = 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
VOL
Maximum LowLevel
Output Voltage
VIN = VIH or VIL
IOL = 50 μA
3.0
4.5
0.0
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.44
0.52
V
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
μA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
2.0
20
40
μA
ICCT
Quiescent Supply
Current
Input: VIN = 3.4 V
5.5
1.35
1.50
1.65
mA
IOPD
Output Leakage
Current
VOUT = 5.5 V
0.0
0.5
5.0
10
μA