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參數資料
| 型號： | MCH3209 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | DC / DC Converter Applications |
| 中文描述： | 直流/直流轉換器應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 37K |
| 代理商： | MCH3209 |
MCH3109 / MCH3209
No.7129-1/5
Applications
Relay drivers, lamp drivers, motor drivers, strobes.
Features
Adoption of MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end
products (0.85mm).
High allowable power dissipation.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7129
MCH3109 / MCH3209
Package Dimensions
unit : mm
2194A
[MCH3109 / MCH3209]
0.3
N3001 TS IM TA-3372, 3373
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP / NPN Silicon Epitaxial Planar Transistors
DC / DC Converter Applications
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0
0
0
2
1
2.0
0.65
0
0.15
1
2
3
1
(Top view)
2
3
(Bottom view)
Specifications
( ) : MCH3109
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
A
A
mA
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
(--30)40
(--)30
(--)5
(--)3
(--)5
(--)600
Mounted on a ceramic board(600mm
2
0.8mm)
0.8
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
(--)0.1
(--)0.1
560
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Marking : MCH3109 : AJ / MCH3209 : CJ
ICBO
IEBO
hFE
fT
Cob
VCB=(--)30V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
μ
A
μ
A
200
(380)450
(25)20
MHz
pF
Continued on next page.
Preliminary
相關PDF資料 |
PDF描述 |
|---|---|
| MCH3109 | DC / DC Converter Applications |
| MCH5818 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode |
| MCH6602 | Ultrahigh-Speed Switching Applications |
| MCH6605 | Ultrahigh-Speed Switching Applications |
| MCH6606 | Ultrahigh-Speed Switching Applications |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MCH3209-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 3A 30V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MCH3211-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 10V 3A SC-82 |
| MCH3217 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| MCH3218 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| MCH3219 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
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