- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380477 > MCH5818 (Sanyo Electric Co.,Ltd.) MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode PDF資料下載
參數(shù)資料
| 型號(hào)： | MCH5818 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode |
| 中文描述： | MOSFET的：P溝道MOSFET的硅SBD智能交通：肖特基二極管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 40K |
| 代理商： | MCH5818 |
MCH5818
No.7754-1/5
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7754
MCH5818
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
DC / DC Converter Applications
Features
Composite type with a P-Channel Sillicon MOSFET (MCH3339) and a Schottky Barrier Diode (SBS007M) contained
in one package facilitating high-density mounting.
[MOSFET]
Low ON-resistance.
Ultrahigh-speed switching.
[SBD]
Short reverse recovery time.
Low forward voltage.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : QU
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
--12
±
12
--1.5
--6.0
0.8
150
V
V
A
A
W
°
C
°
C
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (900mm
2
0.8mm) 1unit
--55 to +125
VRRM
VRSM
IO
IFSM
Tj
Tstg
15
15
0.5
V
V
A
A
°
C
°
C
50Hz sine wave, 1 cycle
3
--55 to +125
--55 to +125
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62504 TS IM TA-3839
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCH6602 | Ultrahigh-Speed Switching Applications |
| MCH6605 | Ultrahigh-Speed Switching Applications |
| MCH6606 | Ultrahigh-Speed Switching Applications |
| MCH6607 | Ultrahigh-Speed Switching Applications |
| MCH6608 | Ultrahigh-Speed Switching Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCH5819 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MCH5819 |
| MCH5819-TL-E | 制造商:SANYO 功能描述:Nch+SBD 30V 1.4A 0.3 MCPH5 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH SCHOT DIODE SC-82 制造商:Sanyo 功能描述:0 |
| MCH5823 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
| MCH5824 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MCH5824 |
| MCH5834 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。