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參數資料
| 型號： | MCH4008 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MCPH4, 4 PIN |
| 文件頁數： | 1/15頁 |
| 文件大?。?/td> | 138K |
| 代理商： | MCH4008 |
MCH4008
No.8395-1/15
Features
Low-noise use
: NF=1.1dB typ (f=2GHz).
High cut-off frequency : fT=20GHz typ (VCE=3V).
Low operating voltage.
High gain
:
S21e
2=16.5dB typ (f=2GHz).
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
9V
Collector-to-Emitter Voltage
VCEO
3.5
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
35
mA
Collector Dissipation
PC
120
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=5V, IE=0A
1.0
A
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
1.0
A
DC Current Gain
hFE
VCE=1V, IC=5mA
100
180
Gain-Bandwidth Product
fT
VCE=3V, IC=15mA
17
20
GHz
Reverse Transfer Capacitance
Cre
VCB=1V, f=1MHz
0.15
pF
Forward Transfer Gain
S21e
21VCE=1V, IC=5mA, f=2GHz
9
13.5
dB
S21e
22VCE=3V, IC=15mA, f=2GHz
16.5
dB
Noise Figure
NF
VCE=1V, IC=5mA, f=2GHz
1.1
dB
Marking : GY
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71505AB MS IM TB-00001491
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
MCH4008
NPN Epitaxial Planar Silicon Transistor
UHF to C Band Low-Noise Amplifier
and OSC Applications
Ordering number : ENN8395
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MCH4009 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:UHF to X Band Low-Noise Amplifier and OSC Applications |
| MCH4009-TL-E | 功能描述:TRANS NPN 3.5V 40MA MCPH4 RoHS:是 類別:分離式半導體產品 >> RF 晶體管 (BJT) 系列:- 產品變化通告:Product Discontinuation 17/Dec/2010 標準包裝:1 系列:- 晶體管類型:NPN 電壓 - 集電極發射極擊穿（最大）:4.7V 頻率 - 轉換:47GHz 噪聲系數（dB典型值@頻率）:0.5dB ~ 1.45dB @ 150MHz ~ 10GHz 增益:9dB ~ 31dB 功率 - 最大:160mW 在某 Ic、Vce 時的最小直流電流增益 (hFE):160 @ 25mA，3V 電流 - 集電極 (Ic)（最大）:45mA 安裝類型:表面貼裝 封裝/外殼:4-SMD，扁平引線 供應商設備封裝:4-TSFP 包裝:Digi-Reel® 其它名稱:BFP 740FESD E6327DKR |
| MCH4009-TL-H | 功能描述:射頻雙極小信號晶體管 HIGH FREQUENCY AMPLIFIER RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發射極最大電壓 VCEO:15 V 發射極 - 基極電壓 VEBO:2 V 集電極連續電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| MCH4013 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor UHF to X Band Low-Noise Amplifier and OSC Applications |
| MCH4013_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:UHF to X Band Low-Noise Amplifier and OSC Applications |
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