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參數資料
| 型號： | MCH5908H |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | MCPH5, 5 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 47K |
| 代理商： | MCH5908H |
MCH5908
No. A1218-1/4
Features
Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting
efficiency greatly.
The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSX
15
V
Gate-to-Drain Voltage
VGDS
--15
V
Gate Voltage
IG
10
mA
Drain Current
ID
50
mA
Allowable Power Dissipation
PD
1 unit
200
mW
Total Power Dissipation
PT
300
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10μA, VDS=0V
--15
V
Gate-to-Source Leakage Current
IGSS
VGS=--10V, VDS=0V
--1.0
nA
Cutoff Voltage
VGS(off)
VDS=5V, ID=100μA
--0.3
--0.7
--1.5
V
Drain Current
IDSS
VDS=5V, VGS=0V
10.0*
32.0*
mA
The specifications shown above are for each individual J-FET.
Continued on next page.
* : The MCH5908 is classified by IDSS as follows (unit : mA).
Marking
KG
KH
Rank
G
H
IDSS(mA)
10 to 20
16 to 32
www.semiconductor-sanyo.com/network
Ordering number : ENA1218
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
22410AC TK IM TC-00002292
SANYO Semiconductors
DATA SHEET
MCH5908
N-Channel Silicon Junction FET
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
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相關代理商/技術參數 |
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| MCH5908H-TL-E | 功能描述:MOSFET N-CH 15V 50MA MCPH5 RoHS:是 類別:分離式半導體產品 >> JFET（結點場效應 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應商設備封裝:3-ECSP1006 功率 - 最大:100mW |
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