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參數資料
| 型號： | MCM62110FN15 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 32K x 9 Bit Synchronous Dual I/O or Separate I/O Fast Static RAM with Parity Checker |
| 中文描述： | 32K X 9 APPLICATION SPECIFIC SRAM, 7 ns, PQCC52 |
| 封裝： | PLASTIC, LCC-52 |
| 文件頁數： | 4/12頁 |
| 文件大小： | 206K |
| 代理商： | MCM62110FN15 |
MCM62110
4
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, VCCQ = 5.0 V or 3.3 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages referenced to VSS = VSSQ = 0 V)
Parameter
Symbol
Min
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
4.5
5.5
V
Output Buffer Supply Voltage (5.0 V TTL Compatible)
(3.3 V 50
Compatible)
VCCQ
4.5
3.0
5.5
3.6
V
Input High Voltage
VIH
2.2
VCC + 0.3
V
Input Low Voltage
VIL
– 0.5*
0.8
V
*VIL (min) = – 3.0 V ac (pulse width
≤
20 ns)
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Ilkg(I)
—
±
1.0
μ
A
Output Leakage Current (POE, SOE = VIH)
Ilkg(O)
—
±
1.0
μ
A
AC Supply Current (All Inputs = VIL or VIH,VIL = 0.0 V and VIH
≥
3.0 V,
Iout = 0 mA, Cycle Time
≥
tKHKH min)
MCM62110–15: tKHKH = 15 ns
MCM62110–17: tKHKH = 17 ns
MCM62110–20: tKHKH = 20 ns
ICCA
—
—
—
190
190
190
mA
TTL Standby Current (VCC = Max, E1 = VIH or E2 = VIL)
ISB1
—
40
mA
CMOS Standby Current (VCC = Max, f = 0 MHz, E1 = VIH or E2 = VIL,
Vin
≤
VSS + 0.2 V or
≥
VCC – 0.2 V)
ISB2
—
30
mA
Output Low Voltage (IOL = + 8.0 mA, DPE: IOL = + 23.0 mA)
VOL
—
0.4
V
Output High Voltage (IOH = – 4.0 mA)
VOH
2.4
—
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Typ
Max
Unit
Input Capacitance (All Pins Except I/Os)
Cin
2
3
pF
Input/Output Capacitance (PDQ0 – PDQ7, SDQ0 – SDQ7, PDQP, SDQP)
Cout
6
7
pF
Data Parity Error Output Capacitance (DPE)
Cout(DPE)
6
7
pF
AC SPEC LOADS
Figure 1A
Figure 1B
5 pF
+ 5 V
DQ
Figure 1C
50 pF
+ 5 V
DPE
255
480
200
DQ
Z0 = 50
RL = 50
VL = 1.5 V
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