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參數資料
| 型號： | MCM6323ATS10 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| 中文描述： | 64K X 16 STANDARD SRAM, 10 ns, PDSO44 |
| 封裝： | TSOP2-44 |
| 文件頁數： | 2/12頁 |
| 文件大?。?/td> | 181K |
| 代理商： | MCM6323ATS10 |
MCM6323A
2
MOTOROLA FAST SRAM
TRUTH TABLE
(X = Don’t Care)
E
G
W
LB
UB
Mode
VDD Current
ISB1, ISB2
IDDA
IDDA
IDDA
IDDA
IDDA
IDDA
IDDA
IDDA
DQa’s
DQb’s
H
X
X
X
X
Not Selected
High–Z
High–Z
L
H
H
X
X
Output Disabled
High–Z
High–Z
L
X
X
H
H
Output Disabled
High–Z
High–Z
L
L
H
L
H
Low Byte Read
Dout
High–Z
High–Z
L
L
H
H
L
High Byte Read
Dout
Dout
High–Z
L
L
H
L
L
Word Read
Dout
Din
High–Z
L
X
L
L
H
Low Byte Write
L
X
L
H
L
High Byte Write
Din
Din
L
X
L
L
L
Word Write
Din
ABSOLUTE MAXIMUM RATINGS
(See Notes)
Rating
Symbol
Value
Unit
Supply Voltage
VDD
Vin
Iout
PD
Tbias
– 0.5 to + 4.6
V
Voltage on Any Pin
– 0.5 to VDD + 0.5
±
20
V
Output Current per Pin
mA
Package Power Dissipation
.75
W
Temperature Under Bias
Commerial
Industrial
– 10 to + 85
– 45 to + 90
°
C
Operating Temperature
Commerial
Industrial
TA
0 to + 70
– 40 to + 85
°
C
Storage Temperature
Tstg
– 55 to + 150
°
C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. All voltages are referenced to VSS.
3. Power dissipation capability will be dependent upon package characteristics and use
environment.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid appli-
cation of any voltage higher than maximum
rated voltages to these high–impedance cir-
cuits.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
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| MCM6323ATS10R | 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| MCM6323ATS12 | 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| MCM6323ATS12R | 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| MCM6323ATS15 | 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| MCM6323ATS15R | 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MCM6323ATS10R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| MCM6323ATS12 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| MCM6323ATS12R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| MCM6323ATS15 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
| MCM6323ATS15R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:64K x 16 Bit 3.3 V Asynchronous Fast Static RAM |
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