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參數資料
型號: MCM6343
廠商: Motorola, Inc.
英文描述: 256K x 15 Bit 3.3 V Asynchronous Fast Static RAM
中文描述: 256K × 15位3.3伏異步快速靜態存儲器
文件頁數: 2/10頁
文件大小: 169K
代理商: MCM6343
MCM6343
2
MOTOROLA FAST SRAM
TRUTH TABLE
(X = Don’t Care)
E
G
W
LB
UB
Mode
VDD Current
ISB1, ISB2
IDDA
IDDA
IDDA
IDDA
IDDA
IDDA
IDDA
IDDA
DQ0 – DQ7
DQ8 – DQ15
H
X
X
X
X
Not Selected
High–Z
High–Z
L
H
H
X
X
Output Disabled
High–Z
High–Z
L
X
X
H
H
Output Disabled
High–Z
High–Z
L
L
H
L
H
Low Byte Read
Dout
High–Z
High–Z
L
L
H
H
L
High Byte Read
Dout
Dout
High–Z
L
L
H
L
L
Word Read
Dout
Din
High–Z
L
X
L
L
H
Low Byte Write
L
X
L
H
L
High Byte Write
Din
Din
L
X
L
L
L
Word Write
Din
ABSOLUTE MAXIMUM RATINGS
(See Notes)
Rating
Symbol
Value
Unit
Supply Voltage
VDD
Vin
Iout
PD
Tbias
– 0.5 to + 4.6
V
Voltage on Any Pin
– 0.5 to VDD + 0.5
±
20
V
Output Current per Pin
mA
Package Power Dissipation
TBD
W
Temperature Under Bias
Commercial
Industrial
– 10 to + 85
– 45 to + 90
°
C
Operating Temperature
Commercial
Industrial
TA
0 to + 70
– 45 to + 85
°
C
Storage Temperature
Tstg
– 55 to + 150
°
C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. All voltages are referenced to VSS.
3. Power dissipation capability will be dependent upon package characteristics and use
environment.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid ap-
plication of any voltage higher than maximum
rated voltages to these high–impedance circuits.
This CMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board and
transverse air flow of at least 500 linear feet per
minute is maintained.
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