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參數資料
| 型號： | MCM63D736 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM(128K x 36 Bit同步雙I/O口,雙地址靜態存儲器) |
| 中文描述： | 128K的× 36位同步雙的I / O，雙地址的SRAM（128K的× 36位同步雙的I / O口，雙地址靜態存儲器） |
| 文件頁數： | 1/16頁 |
| 文件大小： | 126K |
| 代理商： | MCM63D736 |
MCM63D736
1
MOTOROLA FAST SRAM
Motorola, Inc. 2000
128K x 36 Bit Synchronous
Dual I/O, Dual Address SRAM
The MCM63D736 is a 4M–bit static random access memory, organized as
128K words of 36 bits. It features common data input and data output buffers and
incorporates input and output registers on–board with high speed SRAM.
The MCM63D736 allows the user to concurrently perform reads, writes, or
pass–through cycles in combination on the two data ports. The two address ports
(AX, AY) determine the read or write locations for their respective data ports
(DQX, DQY).
The synchronous design allows for precise cycle control with the use of an
external single clock (K). All signal pins except output enables (GX, GY) are
registered on the rising edge of clock (K).
The pass–through feature allows data to be passed from one port to the other,
in either direction. The PTX input must be asserted to pass data from port X to
port Y. The PTY will likewise pass data from port Y to port X. A pass–through
operation takes precedence over a read operation.
For the case when AX and AY are the same, certain protocols are followed. If
both ports are read, the reads occur normally. If one port is written and the other
is read, the read from the array will occur before the data is written. If both ports
are written, only the data on DQY will be written to the array.
Single 3.3 V
±
5% Power Supply
133 MHz Maximum Clock Frequency
Throughput of 4.8 Gigabits/Second
Single Clock Operation
Self–Timed Write
Two Bi–Directional Data Buses
Can be Configured as Separate I/O
Pass–Through Feature
Asynchronous Output Enables (GX, GY)
LVTTL Compatible I/O
Concurrent Reads and Writes
176–Pin TQFP Package
Suggested Applications
— ATM
— Cell/Frame Buffers
— Ethernet Switches
— SNA Switches
— Routers
— Shared Memory
— Cellular Base Stations
— RAID Systems
Order this document
by MCM63D736/D
SEMICONDUCTOR TECHNICAL DATA
MCM63D736
TQ PACKAGE
176 LEAD TQFP
CASE 1101–01
REV 4
7/6/00
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MCM63D736TQ100 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM |
| MCM63D736TQ133 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM |
| MCM63D736TQ83 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM |
| MCM63F733A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM63F733ATQ10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
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