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參數(shù)資料
| 型號(hào)： | MCM63F733A |
| 廠商： | Motorola, Inc. |
| 英文描述： | 128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| 中文描述： | 128K的× 32位流通過BurstRAM同步快速靜態(tài)存儲(chǔ)器 |
| 文件頁數(shù)： | 1/16頁 |
| 文件大小： | 234K |
| 代理商： | MCM63F733A |
MCM63F733A
1
MOTOROLA FAST SRAM
Motorola, Inc. 1998
Advance Information
128K x 32 Bit Flow–Through
BurstRAM Synchronous
Fast Static RAM
The MCM63F733A is a 4M–bit synchronous fast static RAM designed to pro-
vide a burstable, high performance, secondary cache for the PowerPC
and
other high performance microprocessors. It is organized as 128K words of 32
bits each, fabricated with high performance silicon gate CMOS technology.
This device integrates input registers, a 2–bit address counter, and high speed
SRAM onto a single monolithic circuit for reduced parts count in cache data
RAM applications. Synchronous design allows precise cycle control with the
use of an external clock (K). CMOS circuitry reduces the overall power con-
sumption of the integrated functions for greater reliability.
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G) and Linear Burst Order (LBO) are clock (K) controlled through
positive–edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM63F733A (burst sequence
operates in linear or interleaved mode dependent upon state of LBO) and con-
trolled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and synchro-
nous write enable (SW) are provided to allow writes to either individual bytes or
to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls
DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte
writes SBx are asserted with SW. All bytes are written if either SGW is asserted
or if all SBx and SW are asserted.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
The MCM63F733A operates from a 3.3 V core power supply and all outputs
operate on a 2.5 V or 3.3 V power supply. All inputs and outputs are JEDEC
Standard JESD8–5 compatible.
MCM63F733A–10 = 10 ns Access/13 ns Cycle (75 MHz)
MCM63F733A–11 = 11 ns Access/15 ns Cycle (66 MHz)
3.3 V + 10%/– 5% Core, Power Supply, 2.5 V or 3.3 V I/O Supply
ADSP, ADSC, and ADV Burst Control Pins
Selectable Burst Sequencing Order (Linear/Interleaved)
Internally Self–Timed Write Cycle
Byte Write and Global Write Control
Single–Cycle Deselect
Sleep Mode (ZZ)
100–Pin TQFP Package
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MCM63F733A/D
SEMICONDUCTOR TECHNICAL DATA
MCM63F733A
TQ PACKAGE
TQFP
CASE 983A–01
REV 2
3/20/98
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相關(guān)代理商/技術(shù)參數(shù) |
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| MCM63F733ATQ10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM63F733ATQ10R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM63F733ATQ11 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM63F733ATQ11R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
| MCM63F737K | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 and 256K x 18 Bit Flow–Through BurstRAM Synchronous Fast Static RAM |
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