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參數資料
| 型號： | MCM63D736 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM(128K x 36 Bit同步雙I/O口,雙地址靜態存儲器) |
| 中文描述： | 128K的× 36位同步雙的I / O，雙地址的SRAM（128K的× 36位同步雙的I / O口，雙地址靜態存儲器） |
| 文件頁數： | 13/16頁 |
| 文件大小： | 126K |
| 代理商： | MCM63D736 |
MCM63D736
13
MOTOROLA FAST SRAM
TQFP PACKAGE
176–LEAD
CASE 1101–01
PACKAGE DIMENSIONS
C
–M–
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF LEAD AND IS
COINCIDENT WITH THE LEAD WHERE THE THE LEAD EXITS THE
PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE.
4. DATUMS –L–, –M–, AND –N– TO BE DETERMINED AT DATUM PLANE
–H–.
5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE –T–.
6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION.
ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE. DIMENSIONS A
AND B DO INLCUDE MOLD MISMATCH AND ARE DETERMINED AT
DATUM PLANE –H–.
7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. DAMBAR
PROTRUSION SHALL NOT CAUSE THE LEAD WIDTH TO EXCEED 0.35
(0.014) MINIMUM SPACE BETWEEN PROTRUSION AND ADJACENT
LEAD 0.07 (0.003).
PIN 1
1
DIM
A
A1
B
B1
C
C1
C2
D
E
F
G
J
K
P
R1
S
S1
U
V
V1
W
Z
MIN
24.00 BSC
12.00 BSC
24.00 BSC
12.00 BSC
–––
0.05
1.35
0.17
0.45
0.17
0.50 BSC
0.09
0.50 REF
0.25 BSC
0.10
26.00 BSC
13.00 BSC
0.09
26.00 BSC
13.00 BSC
0.20 REF
1,00 REF
0
0
12 REF
MAX
MILLIMETERS
1.60
–––
1.45
0.23
0.75
0.27
0.20
0.20
0.16
7
–––
1
2
éééé
éééé
éééé
D
AB
AB
G
P
X=L, M, N
–X–
VIEW Y
C
ROTATED 90 CLOCKWISE
SEATING
PLANE
GAGE
PLANE
A
A1
C2
W
1
Z
K
E
VIEW AA
0.25
R1
2X R
C1
S
0.05
M
0.08
T
BASE
METAL
PLATING
F
J
U
VIEW Y
4X 44 TIPS
S
L–M
S
N
SECTION AB–AB
C
4X
3X
176
133
132
45
88
44
89
–N–
–L–
L–M N
T
0.20
L–M N
H
0.20
S
S1
V1
B1
C
VIEW AA
V
–H–
–T–
2
4X
T
0.08
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相關代理商/技術參數 |
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| MCM63D736TQ100 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:128K x 36 Bit Synchronous Dual I/O, Dual Address SRAM |
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| MCM63F733ATQ10 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |
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