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參數(shù)資料
型號(hào): MCM63F733ATQ11R
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: 128K x 32 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
中文描述: 128K X 32 CACHE SRAM, 11 ns, PQFP100
封裝: TQFP-100
文件頁(yè)數(shù): 7/16頁(yè)
文件大小: 234K
代理商: MCM63F733ATQ11R
MCM63F733A
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V + 10%, – 5%, TA = 0 to 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS: 2.5 V I/O Supply
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VDDQ
VIL
VIH
VIH2
VOL
VOH
3.135
3.3
3.6
V
I/O Supply Voltage
2.375
2.5
2.9
V
Input Low Voltage
– 0.3
0.7
V
Input High Voltage
1.7
VDD + 0.3
VDDQ + 0.3
0.7
V
Input High Voltage (I/O Pins)
1.7
V
Output Low Voltage (IOL = 2 mA)
Output High Voltage (IOH = – 2 mA)
V
1.7
V
RECOMMENDED OPERATING CONDITIONS: 3.3 V I/O Supply
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
VDDQ
VIL
VIH
VIH2
VOL
VOH
3.135
3.3
3.6
V
I/O Supply Voltage
3.135
3.3
VDD
0.8
V
Input Low Voltage
– 0.5
V
Input High Voltage
2
VDD + 0.5
VDDQ + 0.5
0.4
V
Input High Voltage (I/O Pins)
2
V
Output Low Voltage (IOL = 8 mA)
Output High Voltage (IOH = – 4 mA)
V
2.4
V
VIH
20% tKHKH (MIN)
VSS
VSS – 1.0 V
Figure 1. Undershoot Voltage
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