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參數資料
型號: MCM63P631ATQ117R
廠商: MOTOROLA INC
元件分類: SRAM
英文描述: 64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM
中文描述: 64K X 32 CACHE SRAM, 4.5 ns, PQFP100
封裝: TQFP-100
文件頁數: 5/16頁
文件大小: 228K
代理商: MCM63P631ATQ117R
MCM63P631A
5
MOTOROLA FAST SRAM
TRUTH TABLE
(See Notes 1 through 5)
Next Cycle
Address
Used
SE1
SE2
SE3
ADSP
ADSC
ADV
G 3
DQx
Write 2, 4
Deselect
None
1
X
X
X
0
X
X
High–Z
X
Deselect
None
0
X
1
0
X
X
X
High–Z
X
Deselect
None
0
0
X
0
X
X
X
High–Z
X
Deselect
None
X
X
1
1
0
X
X
High–Z
X
Deselect
None
X
0
X
1
0
X
X
High–Z
X
Begin Read
External
0
1
0
0
X
X
X
High–Z
READ5
READ5
Begin Read
External
0
1
0
1
0
X
X
High–Z
Continue Read
Next
X
X
X
1
1
0
1
High–Z
READ
Continue Read
Next
X
X
X
1
1
0
0
DQ
READ
Continue Read
Next
1
X
X
X
1
0
1
High–Z
READ
Continue Read
Next
1
X
X
X
1
0
0
DQ
READ
Suspend Read
Current
X
X
X
1
1
1
1
High–Z
READ
Suspend Read
Current
X
X
X
1
1
1
0
DQ
READ
Suspend Read
Current
1
X
X
X
1
1
1
High–Z
READ
Suspend Read
Current
1
X
X
X
1
1
0
DQ
READ
Begin Write
External
0
1
0
1
0
X
X
High–Z
WRITE
Continue Write
Next
X
X
X
1
1
0
X
High–Z
WRITE
Continue Write
Next
1
X
X
X
1
0
X
High–Z
WRITE
Suspend Write
Current
X
X
X
1
1
1
X
High–Z
WRITE
Suspend Write
Current
1
X
X
X
1
1
X
High–Z
WRITE
NOTES:
1. X = Don’t Care. 1 = logic high. 0 = logic low.
2. Write is defined as either 1) any SBx and SW low or 2) SGW is low.
3. G is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (tGLQX) following G going low.
4. On write cycles that follow read cycles, G must be negated prior to the start of the write cycle to ensure proper write data setup times. G must
also remain negated at the completion of the write cycle to ensure proper write data hold times.
5. This READ assumes the RAM was previously deselected.
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