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參數資料
| 型號： | MCM63P736 |
| 廠商： | Motorola, Inc. |
| 英文描述： | Replaced by PTH12000W : |
| 中文描述： | 128K的× 36和256 × 18位流水線BurstRAM同步快速靜態存儲器 |
| 文件頁數： | 4/27頁 |
| 文件大小： | 328K |
| 代理商： | MCM63P736 |
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MCM63P636
4
MOTOROLA FAST SRAM
PBGA PIN DESCRIPTIONS
Pin Locations
Symbol
Type
Description
5D
ADS
Input
Synchronous Address Status: Active low, used to initiate read or write
state machines latch in external addresses, or deselect chip.
(a) 1B, 2B, 1D, 2D, 3D, 1F, 2F, 1H, 2H,
1K, 2K, 1M, 2M, 1P, 2P, 3P, 1T, 2T
(b) 8B, 9B, 7D, 8D, 9D, 8F, 9F, 8H, 9H,
8K, 9K, 8M, 9M, 7P, 8P, 9P, 8T, 9T
DQx
I/O
Synchronous Data I/O: “x” refers to the word being read or written
(I/Os a and b).
5F
K
Input
Clock: This signal registers the address, data in, and all control signals.
6C
RESET
Input
Asynchronous Power–On Reset: Active low at power up, resets internal
state machines.
3A, 7A, 3B, 7B, 5M, 5N,
4P, 5P, 6P, 4R, 6R, 3T, 4T, 6T
SA
Input
Synchronous Address Inputs: These inputs are registered and must
meet setup and hold times.
5R, 5T
SA1, SA0
Input
Synchronous Address Inputs: These pins must be wired to the two
LSBs of the address bus for proper burst operation. These inputs are
registered and must meet setup and hold times.
4A
SE1
Input
Synchronous Chip Enable: Active low to enable chip.
5A
SE2
Input
Synchronous Chip Enable: Active high to enable chip.
4B
SE3
Input
Synchronous Chip Enable: Active low to enable chip.
5G
SK
Input
Data Strobe Clock: 180 degrees out–of–phase with K. Used only with
data strobes.
3K
STRBA
Output
Data Strobe: Used in reference to DQa I/Os.
3H
STRBA
Output
Data Strobe: Used in reference to DQa I/Os.
7K
STRBB
Output
Data Strobe: Used in reference to DQb I/Os.
7H
STRBB
Output
Data Strobe: Used in reference to DQb I/Os.
5U
TCK
Input
Boundary Scan Pin, Test Clock: If boundary scan is not used, TCK
must be tied to VDD or VSS.
3U
TDI
Input
Boundary Scan Pin, Test Data In.
7U
TDO
Output
Boundary Scan Pin, Test Data Out.
4U
TMS
Input
Boundary Scan Pin, Test Mode Select.
6U
TRST
Input
Boundary Scan Pin, Asynchronous Test Reset. If boundary scan is not
used, TRST must be tied to VSS.
5C
W
Input
Synchronous Write.
4D, 6D, 3E, 7E, 4F, 6F, 3G, 7G,
4H, 6H, 4K, 6K, 3L, 7L, 4M, 6M, 3N, 7N
VDD
Supply
Core Power Supply.
3F, 7F, 3M, 7M
VDDI
VDDQ
Supply
Input Power Supply.
2A, 8A, 2C, 8C, 2E, 8E, 2G, 8G,
2J, 8J, 2L, 8L, 2N, 8N, 2R, 8R, 2U, 8U
Supply
I/O Power Supply.
1A, 9A, 1C, 3C, 7C, 9C, 1E, 4E, 5E,
6E, 9E, 1G, 4G, 6G, 9G, 5H, 1J, 3J,
4J, 6J, 7J, 9J, 1L, 4L, 5L, 6L, 9L, 1N,
4N, 6N, 9N, 1R, 3R, 7R, 9R, 1U, 9U
VSS
Supply
Ground.
6A, 5B, 5K, 7T
NC
—
No Connection: There is no connection to the chip.
6B
NU/VDD
—
Not Usable: There is an internal connection to the chip. This pin may be
left unconnected or tied to VDD.
4C, 5J
NU/VSS
—
Not Usable: There is an internal connection to the chip. This pin may be
left unconnected or tied to VSS.
相關PDF資料 |
PDF描述 |
|---|---|
| MCM63P736TQ100R | Replaced by PTH12000W : |
| MCM63P736TQ133R | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ66 | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736ZP133R | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736ZP66R | 128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MCM63P736TQ100 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ100R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ133 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ133R | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
| MCM63P736TQ66 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM |
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